Allicdata Part #: | KSA1010Y-ND |
Manufacturer Part#: |
KSA1010Y |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 7A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 7A 1.5W Through... |
DataSheet: | KSA1010Y Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 3A, 5V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSA1010 |
Series: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The advent of the KSA1010Y bipolar junction transistor (BJT) has revolutionized the modern electronics field by providing a reliable and efficient device with a wide range of applications. The single BJT is a three-terminal device consisting of an emitter, collector and base. Within a BJT, the emitter is the source of charge carriers, while the collector is the drain. The base acts as the controlling dimension where a gate voltage or current will control the current flow amongst the other terminals. The KSA1010Y single BJT particularly excels over other BJTS in terms of its versatility and high current gain performance.
The primary function of the KSA1010Y single BJT is to act as a switch. When a small current is passed through the base, the collector current will increase, allowing for higher current flow between the collector and the emitter. The KSA1010Y offers several advantages when used as switches, including its low-on resistance and high-off resistance, two attributes that make the device superior in terms of minimal power loss and maximum performance.
The specific data is subject to PDF, and the above content is for reference
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