Allicdata Part #: | KSA1010OTU-ND |
Manufacturer Part#: |
KSA1010OTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 7A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 7A 1.5W Through... |
DataSheet: | KSA1010OTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 3A, 5V |
Power - Max: | 1.5W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSA1010 |
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The KSA1010OTU is a single bipolar junction transistor (BJT). It is primarily used in application fields that require fast switching in power or pre-driver circuits, such as audio amplifiers, loudspeakers, radios, televisions and other audio and video equipment. This transistor can handle power rating up to 10A and has a voltage rating of up to 80V DC.
This device is composed of three terminals - the collector, base and emitter. Its construction employs an NPN architecture and includes an integrated protection diode. This protection diode works to shield the device from overload, thereby protecting the transistor from damage. The collector is typically connected to the load, and the base is the input terminal of the circuit.
In operation, the gating of the NPN transistor is controlled by the voltage applied at the base terminal. This voltage needs to be greater than the collector voltage for the device to conduct current. When the base voltage rises above the collector voltage, current starts to flow from the collector to the emitter. The transistor then behaves like a switch that allows current to flow in either direction. The collector to emitter current will vary depending on the base current.
The KSA1010OTU transistor is capable of providing fast switching speed, making them suitable for use in data conversion applications. It has very low capacitance and low operating temperature. It also has a high signal-to-noise ratio (SNR). The maximum frequency of this device is up to 100 MHz and the breakdown voltage is up to 400V.
The KSA1010OTU is designed to work in the linear, or Class A region of operation. In this region, the base current is at its maximum, and the transistor will be able to execute its intended purpose with high fidelity. The linear region of operation is ideal for high performance audio applications but not for high power applications. For this reason, it is generally not used in high power circuits such as switching regulators, motors or large loads.
In addition to its use in audio applications, the KSA1010OTU is also used in power supplies and DC-to-DC converters. It is used to regulate the current in a circuit, as well as to switch power between different levels. The device is also used in Voltage-Controlled Amplifiers (VCAs), which are used to control the level of audio volume in consumer audio products such as MP3 players, amplifiers, and consumer electronics.
With its versatile use and its tightcut construction, the KSA1010OTU is a popular choice for applications that require fast switching in power or pre-driver circuits. Its fast switching speed and low operating temperature make it suitable for data conversion applications and its high signal-to-noise ratio makes it suitable for audio applications.
The specific data is subject to PDF, and the above content is for reference
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