KSA1370ETA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	200V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 2mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 10V
Power - Max:	1W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	KSA1370

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KSA1370ETA Application Field and Working Principle

The KSA1370ETA is a bipolar Junction Transistor (BJT), also referred to as a single transistor, is a three terminal semiconductor device designed to amplify, switch or generate signals. The KSA1370ETA is widely used in consumer electronics like televisions, stereos, computers, and even household appliances.

The Basics of a BJT

A BJT has three layers of semiconductor material arranged in a tiny crystalized structure. These layers, called the emitter, base, and collector, are used to control the current flow from the emitter to the collector when the base is stimulated with an electric current. Each layer contains a different semiconductor with different characteristics and dopant concentrations.

Basic Operation of a BJT

Before discussing the operation of the KSA1370ETA, let\'s look at the operation of a BJT in general. A BJT is an active component that requires a current or voltage to be applied to its base terminal in order for current to flow from its emitter to its collector terminal. When the base current is increased, the current from the emitter to the collector increases. This increase in current is what amplifies the signal.The base current also determines the gain of the amplifier. The higher the base current, the larger the emitter-collector current, and, thus, the higher the gain.

KSA1370ETA Application Fields and Working Principle

The KSA1370ETA is a high gain, high current NPN silicon BJT. It is designed to operate in a wide range of current amplifications and is designed to use low base currents. This makes it well suited for a variety of applications such as operational amplifiers, digital logic circuits, and AC/DC/DC converters.The working principle of the KSA1370ETA is similar to other BJTs. When a current is applied to the base terminal, the current from the emitter to the collector increases, amplifying the signal. The higher the base current, the higher the gain. The KSA1370ETA\'s main features include a high current capability, low saturation voltage, and high gain. It is also not affected by temperature changes, low power consumption and is electrically stable. This makes the KSA1370ETA well suited for use in applications where high current draw, control, and precision are required.In conclusion, the KSA1370ETA is a highly efficient NPN silicon BJT that is well suited for various applications that require accurate control and power efficiency. It has excellent gain and saturation voltage characteristics, allowing it to be used in a wide range of applications.

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