KSA1220AYS Allicdata Electronics
Allicdata Part #:

KSA1220AYSFS-ND

Manufacturer Part#:

KSA1220AYS

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 160V 1.2A TO-126
More Detail: Bipolar (BJT) Transistor PNP 160V 1.2A 175MHz 1.2W...
DataSheet: KSA1220AYS datasheetKSA1220AYS Datasheet/PDF
Quantity: 1849
1 +: $ 0.41000
10 +: $ 0.39770
100 +: $ 0.38950
1000 +: $ 0.38130
10000 +: $ 0.36900
Stock 1849Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
Power - Max: 1.2W
Frequency - Transition: 175MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: KSA1220
Description

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The KSA1220AYS is a bipolar junction transistor (BJT) that is classified as a single transistor. It is used in a variety of applications, including switching and amplifying devices, such as digital logic and motor control circuits. The device is known for its low collector–emitter saturation voltage and high switching speed. In addition, it has very low on-state resistance, making it an efficient device for use in power switching applications.

The KSA1220AYS is typically used for its low power dissipation and high efficiency performance. When used in switching circuits, it is typically operated in a saturation region. This allows the transistor to provide better robustness and reliability while maintaining very low power dissipation.

The KSA1220AYS uses conventional junction transistor construction and physical structure. It typically includes four leads, which correspond to the emitter, collector, and base connections, as well as the gate connection. The emitter and collector are made from N-type silicon semiconductor materials, while the base is made from P-type silicon material. The gate connections are typically connected to an insulated gate electrode, which plays a key role in controlling current flow between collector and emitter.

The KSA1220AYS works by allowing current to flow from the emitter to the collector. When a small current from the base is applied, this current is amplified and the resulting large current flows from the emitter to the collector. This can be used to perform a variety of tasks, such as amplifying a signal or switching a load on and off.

The KSA1220AYS has a variety of advantages making it suitable for a variety of applications. Its low collector–emitter saturation voltage and high switching speed makes it ideal for use in digital logic and switching circuits. Its low on-state resistance also makes it suitable for use in power switching applications. Finally, its conventional structure and construction make the device suitable for use in a variety of circuits.

In conclusion, the KSA1220AYS is a single bipolar junction transistor (BJT) that has a variety of uses. It is suitable for use in digital logic and switching circuits as it has a low collector–emitter saturation voltage and high switching speed. It is also suitable for use in power switching applications due to its low on-state resistance. The KSA1220AYS thus provides efficient and reliable performance for a range of uses.

The specific data is subject to PDF, and the above content is for reference

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