Allicdata Part #: | KSA1175YBU-ND |
Manufacturer Part#: |
KSA1175YBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.15A TO-92S |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 250m... |
DataSheet: | KSA1175YBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 250mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Base Part Number: | KSA1175 |
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The KSA1175YBU is a single bipolar junction transistor (BJT) that was developed by a large electronics manufacturer for a variety of applications. Its general purpose makes it suitable for use in power and RF circuits and amplifiers. This transistor is widely used in consumer electronics, radio communications, and medical devices.
A UJT or a BJT is composed of three different components. It has an emitter, a collector, and a base. These components form a pn junction which is an active semiconductor junction. Current can then flow through this junction.
The KSA1175YBU has a wide variety of features that make it suitable for different applications. Its high power capability of 250mW at 50V renders it suitable for use in power circuits. Its relatively low no-load power consumption makes it a great choice for consumer electronics with energy conservation concerns. It has a low forward voltage drop of 0.7V which makes it more efficient than other BJTs in terms of energy consumption. Furthermore, it has a low saturation voltage of 0.2V which makes it suitable for use in RF amplifiers.
Regarding its working principle, the KSA1175YBU is a NPN transistor which means the collector and emitter are negative with respect to the base. When the transistor is activated, current from the collector makes the junction between the collector and base a forward biased PN junction, allowing electrons to flow from the emitter to the collector. By properly biasing the base, collector and emitter, current can be passed, amplified, or blocked thus making the device suitable for a wide variety of applications.
In summary, the KSA1175YBU is a single bipolar junction transistor (BJT) designed for use in power and RF circuits and amplifiers. It has a wide variety of features such as high power capability, low no-load power consumption, and low forward voltage drop and saturation voltage that make it a good choice for different applications. It works by making the junction between the collector and base a forward biased PN junction, allowing electrons to flow from the emitter to the collector.
The specific data is subject to PDF, and the above content is for reference
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