KSA1281OBU Allicdata Electronics
Allicdata Part #:

KSA1281OBU-ND

Manufacturer Part#:

KSA1281OBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 2A TO-92L
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 100MHz 1W Thro...
DataSheet: KSA1281OBU datasheetKSA1281OBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3
Base Part Number: KSA1281
Description

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Introduction to KSA1281OBU

The KSA1281OBU is a single bipolar junction transistor (BJT) designed for application in the aerospace and defense industry. It is commonly used to switch signals or in high-frequency oscillators. The KSA1281OBU is a technology that is the result of decades of research and development to ensure reliability and robust performance. It is designed to meet the demands of challenging environmental conditions and provides superior temperature stability and high-efficiency power delivery.

Purpose and Design of KSA1281OBU

The KSA1281OBU was designed to meet the stringent requirements of avionics applications. It utilizes a high-speed design that provides low switching losses and high thermal efficiency. The device can be used for both high-speed switching and linear applications, offering superior performance versus discrete solutions. It is comprised of a single p-type semiconductor sandwiched between two n-type semiconductors, through which holes and electrons can pass. This arrangement forms a junction that is used to conduct current.The KSA1281OBU is also available in a variety of packages, including an SOIC8 and CDIP4, which are both surface mount and are available for automated assembly. Depending on the package type and application, different operating temperature ranges and power options are available.

Advantages of KSA1281OBU

The KSA1281OBU transistor benefits from a range of features that make it ideal for aerospace applications. It has one of the highest junction temperatures on the market and is resistant to common environmental hazards, such as shock and vibration. The device also offers excellent switching performance and offers a high degree of EMI immunity.The KSA1281OBU is also designed with high-performance switching control logic that ensures reliable switching and reduces power consumption during low-power operation. This superior control logic helps reduce the need for additional external components for switching applications. Another key advantage of the device is its low-power consumption. When compared to other discrete solutions, it offers up to 40 percent power savings due to its high-efficiency power delivery.

Uses of KSA1281OBU

The KSA1281OBU is designed to meet the demands of high-performance applications in the aerospace industry, but it can also be used in other high-intensity applications. It is commonly used in commercial applications, such as automotive, medical, and industrial, as well as high-speed communication applications. Furthermore, it can be used in a variety of switching applications, such as high-frequency amplifiers, logic switches, and bandgap references.

Conclusion

The KSA1281OBU is a single bipolar junction transistor that offers many advantages for aerospace, defense, commercial, and industrial applications. It has been designed with high-speed capability and low-power consumption, and offers excellent switching performance and high thermal efficiency. Additionally, it is available in a variety of packages for automated assembly. The KSA1281OBU is a reliable and robust solution for any application requiring high-performance switching.

The specific data is subject to PDF, and the above content is for reference

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