KSB707YTU Allicdata Electronics
Allicdata Part #:

KSB707YTU-ND

Manufacturer Part#:

KSB707YTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 7A TO-220
More Detail: Bipolar (BJT) Transistor PNP 60V 7A 1.5W Through ...
DataSheet: KSB707YTU datasheetKSB707YTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 1V
Power - Max: 1.5W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Description

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Introduction

KSB707YTU is a power transistor manufactured by STMicroelectronics, a global semiconductor leader. The device is designed to provide superior performance, high reliability, low noise and efficient power in high current switching applications. KSB707YTU transistors belong to the single bipolar junction transistor (BJT) category, and feature robust metal-oxide-semiconductor (MOS) gate technology for superior switching performance.

Application Field

KSB707YTU transistors are well suited for high-current switching applications like DC motor drives, solar inverters, lighting control, automotive power management and power supplies. They are also useful in PWM and audio amplifier applications, as well as other applications that require high power or high-current switching.

Working Principle

The KSB707YTU transistor is a bipolar junction transistor (BJT). As a three terminal device, it consists of a Base terminal, a Collector terminal, and an Emitter terminal. It operates on the principle of transistor action. As current flows through the base terminal, it activates the Emitter-Base junction, producing current flow through the Collector-Base junction. This allows current to flow through the Collector-Emitter junction and thus, completes the transistor circuit.

Features

KSB707YTU transistors feature low on resistance (RDSON) of up to 5.2 W (typ), and they offer superior power handling capability. They also feature a very low tail current and a wide operating temperature range from -55 °C to + 175 °C. Other features include low gate charge (QG) for improved switching performance and enhanced ESD handling, low noise operation, high blocking voltage and superior thermal characteristics.

Conclusion

KSB707YTU transistors are versatile power transistors suitable for a variety of high-current switching applications. The device combines superior performance, superior power handling, low noise and low on resistance to deliver an efficient solution for applications requiring high power or high-current switching. The device is designed to withstand harsh environmental conditions and features robust gate technology for improved switching performance, low gate charge and superior thermal characteristics.

The specific data is subject to PDF, and the above content is for reference

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