KSB744OSTU Allicdata Electronics
Allicdata Part #:

KSB744OSTU-ND

Manufacturer Part#:

KSB744OSTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 3A TO-126
More Detail: Bipolar (BJT) Transistor PNP 45V 3A 45MHz 1W Throu...
DataSheet: KSB744OSTU datasheetKSB744OSTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 45MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Description

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KSB744OSTU is a single bipolar junction transistor (BJT) often used in various applications of power electronics. It is designed to have excellent switching properties and low saturation voltage. It is specifically used for medium-power applications of switching power supplies, variable speed motor control circuits, battery-powered drives, and other power-electronic products where low power losses and high power efficiency are desired.

KSB744OSTU is composed of two p-type semiconductor wafers separated by a thin n-type layer, forming a vertical device. This type of transistor is well-suited to operate in the high-current and high-voltage ranges. The device has a low saturation voltage and good switching characteristics.

KSB744OSTU is a bipolar junction transistor suitable for both linear and saturated load applications. It has a low on-state collector-to-emitter voltage and a high switching speed. The switching performance of this device is optimized in higher power range applications to deliver improved efficiency and power loss. This allows the KSB744OSTU to be applied with greater reliability than other similarly-sized BJTs.

In the KSB744OSTU, a small base current turns on a large collector current. This is possible thanks to the low saturation voltage of the device, which allows a high current gain with a small base current when compared to other similarly-sized BJTs. The high current gain of the device makes it an excellent choice for switching power supplies and other power electronic applications.

KSB744OSTU is also a suitable replacement for other transistors in linear applications. It has a low saturation voltage, which leads to less power dissipation. In addition, its low turn-on voltage can yield improved efficiency and increased life expectancy. This makes KSB744OSTU an ideal replacement for older, inefficient transistors in linear applications.

The physical construction of a KSB744OSTU is simple and compact, making it very reliable and suitable for various applications including switching circuits. Its excellent characteristics make it a great choice for applications that require medium-power performance and enhanced reliability. As a result, KSB744OSTU is a suitable and economical solution for many power-electronic products.

The specific data is subject to PDF, and the above content is for reference

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