KSB772YSTSTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 1A, 2V
Power - Max:	1W
Frequency - Transition:	80MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3
Base Part Number:	KSB772

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Introduction

KSB772YSTSTU is a single bipolar junction transistor (BJT) used in many applications. It is a switching device that is able to control the current flow of an electrical circuit by amplifying an input signal. This device is widely used in radio frequency (RF) applications due to its ability to provide low distortion, wide-bandwidth signals. This device can be used for a variety of applications including amplifier, oscillator, MW and HF applications.

Types of KSB772YSTSTU

KSB772YSTSTU transistors are available as both MOSFET and BJT types. The MOSFET type is suitable for switching applications due to its low capacitance and low noise operation. The BJT type is more suitable for amplifier and oscillator applications due to its higher gain and faster switching speed.

KSB772YSTSTU Application Field

KSB772YSTSTU’s application field mainly includes the type switch and amplifier. KSB772YSTSTU as an actuator, it draws a small current through its base layer, then with the amplification and control of the base layer, it requires a simple circuit to can control the current of the external load, so it is widely used in the control and switch of various electrical fields. The application of amplifier mainly lies in the components of pulse circuits and radio frequency circuits. The amplifier circuit with KSB772YSTSTU as the core component can amplify the signal and reduce the interference, and can also meet the needs of high speed, low noise and low distortion.

KSB772YSTSTU Working Principle

KSB772YSTSTU working principle based on the potentiometer action of the three-terminal device. The three electrodes of KSB772YSTSTU are the base, collector and emitter, respectively known as B, C and E. The base-emitter junction of the KSB772YSTSTU is forward-biased, and the base-collector junction is reverse-biased. When a small current passes through the base layer, the base-emitter junction produces an induced electric field, and the electric field is amplified by the connection between the collector and the base layer, resulting in a current from the collector to the emitter, thus the KSB772YSTSTU controlling and switching the external load.

Construction and Characteristics

KSB772YSTSTU transistors are built with two layers of semiconductor material, with different impurities added to each layer. The base layer contains a heavy concentration of impurities which give it a high resistance. This layer also contains an electrode which will be connected to the base of the transistor. The collector layer contains a light concentration of impurities and acts as an amplifier of electricity. This layer also contains an electrode which will be connected to the collector of the transistor.The main characteristic of KSB772YSTSTU are their ability to maintain a relatively high current gain, even when used at high frequencies. This makes them ideal for use in amplifiers and oscillators. Additionally, KSB772YSTSTUs have a low voltage drop across the device, making them efficient for power applications.

Conclusion

In conclusion, KSB772YSTSTU transistors are a useful tool for a variety of applications. They can be used for amplifying, switching, and oscillating. They have a high current gain, low voltage drop, and are fast switching, making them perfect for high frequency and power applications. With an understanding of its applications field, working principle, construction, and characteristics, one can understand the utility of KSB772YSTSTU transistors and make informed decisions when using them in their projects.

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