| Allicdata Part #: | KSB772YSTSSTU-ND |
| Manufacturer Part#: |
KSB772YSTSSTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 30V 3A TO-126 |
| More Detail: | Bipolar (BJT) Transistor PNP 30V 3A 80MHz 1W Throu... |
| DataSheet: | KSB772YSTSSTU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 1A, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | 80MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-126-3 |
| Base Part Number: | KSB772 |
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A KSB772YSTSSTU transistor is a type of single-bipolar junction transistor (BJT) that is often used in basic electronic circuitry applications. This transistor is used for various applications such as switching and amplifying signals, and its working principle relies on the electrical properties of a junction between two different PN-type semiconductor materials. This article will cover the application field of the KSB772YSTSSTU transistor, as well as how it works.
The KSB772YSTSSTU is part of the BJT family of transistors, which are often used for basic applications. This type of transistor has three terminals, the collector, the base, and the emitter. When an electrical current is applied to the base terminal, it changes the level of current flow from the collector to the emitter. This is done using the transistor\'s property of amplification, whereby a small base current can allow for a much larger current to flow from the collector to the emitter.
The KSB772YSTSSTU has many different applications. It can be used for signal switching, to control the amount of current flowing through a circuit. It can also be used for signal amplification, enabling a small input signal to produce a larger output signal. The KSB772YSTSSTU is also commonly used in DC and signal circuit amplifiers and voltage regulators, as well as oscillator circuits. Additionally, it can be used in logic integrated circuits and logic gates.
The working principle of the KSB772YSTSSTU transistor is based on the PN junction formed between two different types of semiconductor materials. The two materials are known as the N-type and P-type, which are oppositely charged materials. When the N-type material is connected to the positive side of the battery, it will attract electrons from the P-type material, thus forming a PN junction. When a small current is applied to the base terminal, it alters the level of current flow from the collector to the emitter, enabling the transistor to amplify or reduce a signal.
In conclusion, the KSB772YSTSSTU transistor is a type of single-bipolar junction transistor (BJT) that is often used in various applications such as signal switching, amplification, voltage regulation and oscillator circuits. Its working principle is based on the electrical properties of a junction between two different PN-type semiconductor materials. The KSB772YSTSSTU can be a valuable tool for basic electronic circuitry applications.
The specific data is subject to PDF, and the above content is for reference
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KSB772YSTSSTU Datasheet/PDF