KSB708RTU Allicdata Electronics
Allicdata Part #:

KSB708RTU-ND

Manufacturer Part#:

KSB708RTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 7A TO-220
More Detail: Bipolar (BJT) Transistor PNP 80V 7A 1.5W Through ...
DataSheet: KSB708RTU datasheetKSB708RTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 1V
Power - Max: 1.5W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Description

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The KSB 708RTU is one of the most popular transistors today, due to its excellent performance and reliability. The KSB 708RTU is a single bipolar junction transistor (BJT) designed and manufactured by KSB International. The KSB 708RTU offers a variety of features, including a low output impedance, wide temperature range, and a low noise level.

The KSB 708RTU is typically used in a number of applications, such as audio power amplifiers, in switch mode power supplies, as well as in automotive and aerospace systems. The KSB 708RTU can also be used in a variety of other applications, including as switch drivers, in communication systems, in amplifiers, and in other industrial applications.

The KSB 708RTU is typically used in an NPN configuration, with an operating temperature range of -40°C to +125°C. The device has a low saturation voltage, high current capability, and low operating temperature. The KSB 708RTU offers maximum junction temperature of +150°C and a maximum collector-emitter voltage of 500V. The KSB 708RTU also features a built-in collector-emitter avalanche rating of ±20V.

The KSB 708RTU also offers excellent thermal performance, high reliability, and long-term stability. The KSB 708RTU device is designed with a thin oxide layer and a low quartz doping concentration, resulting in improved thermal and electrical performance.

The KSB 708RTU’s working principle is based on the flow of current between electrodes. When a potential difference is applied between the collector and emitter, a current flows in the base-collector junction in an NPN configuration. This current flow also creates an electric field in the junction, which in turn causes electrons to flow through the device and form a stream of electrons from the collector to the emitter. This electron stream is known as the collector current, which is then propagated to the output terminal.

The KSB 708RTU is a very reliable and versatile device, and it offers excellent performance and durability. The device is ideal for a number of applications, from audio power amplifiers to automotive and aerospace systems. The KSB 708RTU is an ideal choice for any application requiring a reliable, high performance transistor.

The specific data is subject to PDF, and the above content is for reference

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