LD1117V50-DG

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The LD1117V50-DG is a three-terminal, polyphase linear and low-dropout (LDO) voltage regulator with an operating current up to 50 mA. It provides an output voltage of 1.7V and a voltage accuracy of ±2.5% at room temperature. The LD1117V50-DG is designed to have a high current-density feature and a low quiescent current, making it suitable for portable devices, such as digital cameras and mobile phones.

The LD1117V50-DG has a wide range of operating temperature from -40 to 85 C and it is able to support a variety of applications. Its main application field covers various portable and low-power circuits, such as system power supplies, camera modules, telecommunication, and consumer electronics.

The working principle of the LD1117V50-DG is relatively simple. Its main function is to regulate an input voltage to a constant output voltage. The circuit consists of an input voltage source, a summing amplifier, a P-channel MOSFET, a band-gap reference, an error amplifier, a feedback divider, a series pass transistor and an output filter. When switched on, the regulator will detect the output voltage by the voltage divider. This voltage signal is amplified by the error amplifier and compared to a reference voltage generated by the band-gap circuit. If the output voltage is too low, the difference signal triggers the P-channel MOSFET. This will cause the output current to flow in the series pass transistor, so that the output voltage increases. The output voltage is finally filtered by the output filter and the excess noise is suppressed.

In conclusion, the LD1117V50-DG is an effective three-terminal, polyphase linear voltage regulator with a high current-density and low quiescent current. It has an output voltage of 1.7V and a voltage accuracy of ±2.5% at room temperature. Its application fields include system power supplies, camera modules, telecommunication, and consumer electronics. The working principle of this regulator is regulating a given input voltage to a constant output voltage by summing amplifier, P-channel MOSFET, band-gap reference, error amplifier, feedback divider, series pass transistor and output filter.

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