LP0701N3-G Allicdata Electronics
Allicdata Part #:

LP0701N3-G-ND

Manufacturer Part#:

LP0701N3-G

Price: $ 0.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET P-CH 16.5V 0.5A TO92-3
More Detail: P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO...
DataSheet: LP0701N3-G datasheetLP0701N3-G Datasheet/PDF
Quantity: 710
1 +: $ 0.88830
25 +: $ 0.73987
100 +: $ 0.67486
Stock 710Can Ship Immediately
$ 0.98
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
Vgs (Max): ±10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 300mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Drain to Source Voltage (Vdss): 16.5V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Bulk 
Description

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The LP0701N3-G is a high-frequency MOSFET, which is a type of field-effect transistor (FET). It is a single-type MOSFET and is used in many different applications. In this article, we will look at the application field and working principle of the LP0701N3-G.

Applications of LP0701N3-G

The LP0701N3-G is a great choice for many different applications. One of the most popular applications is high-frequency switching, as the LP0701N3-G is capable of operating up to 4 GHz. Additionally, it can be used in power amplifiers and power converters. It can also be used in digital circuits and radio-frequency (RF) applications. Some of the other popular applications of the LP0701N3-G include:

  • Signal amplifiers
  • Efficient DC-DC converters
  • Mobile base station power amplifiers
  • Industrial motor controllers
  • Efficient LED lighting controllers
  • High-speed circuits

Working Principle

The LP0701N3-G is a type of MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. It operates on the principle of an insulating layer of an oxide material being placed between a source and a drain terminal. The MOSFET is able to control current flow through this insulating layer by modulating the voltage applied at the gate. When a voltage is applied, it modulates the insulating layer and allows current to flow. This is why MOSFETs are a great choice for high-frequency switching applications, as the gate voltage can be adjusted quickly and precisely.

Additional Features

The LP0701N3-G has some additional features that make it a great choice. It is a 75-Volt device, which is great for applications where higher voltage levels are required. It has an on-resistance of 6-Ohms at 17V, making it a great choice for high efficiency power conversion and switching applications. Additionally, it has a high current capacity of 6A.

The LP0701N3-G is also a great choice for noise reduction applications, as it has a great noise performance with a maximum noise figure of 1.5dB. Additionally, it has very low thermal resistance, so it won’t overheat, even when running at high temperatures.

Conclusion

The LP0701N3-G is a great choice for many different applications, especially for high-frequency switching and power conversion. It has a great on-resistance and current capacity, and it is capable of operating up to 4GHz. Additionally, it has great noise performance and low thermal resistance, making it a great choice for a variety of applications. If you’re looking for a single MOSFET for your application, the LP0701N3-G is definitely worth considering.

The specific data is subject to PDF, and the above content is for reference

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