
Allicdata Part #: | LP0701N3-G-ND |
Manufacturer Part#: |
LP0701N3-G |
Price: | $ 0.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 16.5V 0.5A TO92-3 |
More Detail: | P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 710 |
1 +: | $ 0.88830 |
25 +: | $ 0.73987 |
100 +: | $ 0.67486 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 15V |
Vgs (Max): | ±10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 300mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 2V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Tj) |
Drain to Source Voltage (Vdss): | 16.5V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The LP0701N3-G is a high-frequency MOSFET, which is a type of field-effect transistor (FET). It is a single-type MOSFET and is used in many different applications. In this article, we will look at the application field and working principle of the LP0701N3-G.
Applications of LP0701N3-G
The LP0701N3-G is a great choice for many different applications. One of the most popular applications is high-frequency switching, as the LP0701N3-G is capable of operating up to 4 GHz. Additionally, it can be used in power amplifiers and power converters. It can also be used in digital circuits and radio-frequency (RF) applications. Some of the other popular applications of the LP0701N3-G include:
- Signal amplifiers
- Efficient DC-DC converters
- Mobile base station power amplifiers
- Industrial motor controllers
- Efficient LED lighting controllers
- High-speed circuits
Working Principle
The LP0701N3-G is a type of MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. It operates on the principle of an insulating layer of an oxide material being placed between a source and a drain terminal. The MOSFET is able to control current flow through this insulating layer by modulating the voltage applied at the gate. When a voltage is applied, it modulates the insulating layer and allows current to flow. This is why MOSFETs are a great choice for high-frequency switching applications, as the gate voltage can be adjusted quickly and precisely.
Additional Features
The LP0701N3-G has some additional features that make it a great choice. It is a 75-Volt device, which is great for applications where higher voltage levels are required. It has an on-resistance of 6-Ohms at 17V, making it a great choice for high efficiency power conversion and switching applications. Additionally, it has a high current capacity of 6A.
The LP0701N3-G is also a great choice for noise reduction applications, as it has a great noise performance with a maximum noise figure of 1.5dB. Additionally, it has very low thermal resistance, so it won’t overheat, even when running at high temperatures.
Conclusion
The LP0701N3-G is a great choice for many different applications, especially for high-frequency switching and power conversion. It has a great on-resistance and current capacity, and it is capable of operating up to 4GHz. Additionally, it has great noise performance and low thermal resistance, making it a great choice for a variety of applications. If you’re looking for a single MOSFET for your application, the LP0701N3-G is definitely worth considering.
The specific data is subject to PDF, and the above content is for reference
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