LSM335J/TR13 Allicdata Electronics
Allicdata Part #:

LSM335J/TR13-ND

Manufacturer Part#:

LSM335J/TR13

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE SCHOTTKY 35V 3A DO214AB
More Detail: Diode Schottky 35V 3A Surface Mount DO-214AB
DataSheet: LSM335J/TR13 datasheetLSM335J/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.53582
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1.5mA @ 35V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: LSM335
Description

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The LSM335J/TR13 is a single rectifier diode designed to provide a low loss, low-voltage drop, high-current rectification. The device\'s low on-state voltage of just 0.18V, means it can be used in applications requiring low-voltage drop, such as automotive and industrial control circuits. It is also suitable for use in high-efficiency power supplies, audio amplifiers, and DC-DC converters.

The LSM335J/TR13 features a high reverse voltage of 80V with a low reverse leakage current of 100uA. The device\'s dual-layer metallization ensures excellent thermal performance, allowing it to safely handle high current levels for extended periods of time. The device also features a low junction capacitance for high-frequency applications. The device is available in an SO-8 package.

The LSM335J/TR13 is designed to provide a low-voltage drop rectification in automotive, industrial and consumer applications. The device is also suitable for use in high-efficiency power supplies, audio amplifiers, and DC-DC converters. The device\'s low on-state voltage of just 0.18V means it can be used in applications requiring low-voltage drop.}

The device\'s working principle is based on the "junction barrier" principle, where the voltage required to forward-bias the junction depends on the material\'s doping level, temperature, and applied current. When a diode is reverse-biased, no current flows through it until a certain voltage threshold is reached, after which the voltage across the diode increases linearly with increasing current. When forward-biased, current flows through the diode in direct proportion to the applied voltage. When the applied voltage is sufficient to forward-bias the P-N junction, electrons from the N-type semiconductor recombine with holes from the P-type semiconductor, leaving behind a “charge” of majority carriers that are forced across the junction by the applied voltage.

The device\'s low junction capacitance ensures low switching times, making it suitable for high speed, high-frequency applications. The device\'s dual-layer metallization ensures excellent thermal performance, allowing it to safely handle high current levels for extended periods of time. The device is also rated to operate over a wide temperature range - from -55°C to +150°C. This allows it to safely handle higher-temperature conditions, whichwould otherwise reduce its performance.

In summary, the LSM335J/TR13 is a single diode designed to provide low voltage drop and high-current rectification. It features low on-state voltage, a high reverse voltage and low reverse leakage current, along with low junction capacitance for high-frequency applications. The device is also rated to operate over a wide temperature range, making it suitable for automotive, industrial, consumer and high-efficiency power supply applications.

The specific data is subject to PDF, and the above content is for reference

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