LSM340GE3/TR13 Allicdata Electronics
Allicdata Part #:

LSM340GE3/TR13-ND

Manufacturer Part#:

LSM340GE3/TR13

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE SCHOTTKY 40V 3A DO215AB
More Detail: Diode Schottky 40V 3A Surface Mount DO-215AB
DataSheet: LSM340GE3/TR13 datasheetLSM340GE3/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.37044
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1.5mA @ 40V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: LSM340
Description

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Overview

The LSM340GE3/TR13 is a single rectifier diode from STMicroelectronics. It is a low forward-voltage diode, made of high-quality silicon material so it can work up to 100V, and with a forward current of 3A.

Application Field and Working Principle

The LSM340GE3/TR13 is typically used in high-efficiency, low-voltage applications such as UPSs, power supplies, and motor-drive circuits. It can also be used in many low-voltage, high-speed applications due to its low-forward voltage.

The working principle of the LSM340GE3/TR13 is based on the PN junction. In the simplest terms, when there is a forward-bias applied across its terminals, minority carriers (electrons and holes) within the depletion region flow in the direction of the junction, allowing for current conduction. When a voltage is applied across the terminals with the anode (positive) connected to the P region, and the cathode (negative) connected to the N region, electrons flow from the N region to the P region and holes travel in the opposite direction.

When the diode is forward-biased, the PN junction barrier is reduced and allows electrons to move from N region to P region. This constitutes a small current known as leakage current. When the forward voltage becomes equal to the diode\'s on-voltage, the potential barrier is completely eliminated, allowing for the full-on current to pass through.

The reverse-biased LSM340GE3/TR13, on the other hand, depends on the potential barrier of the PN junction. Here, minority carriers within the PN junction cannot move in the direction of the junction due to the presence of the barrier. This enables the diode to block any reverse current.

Specifications

The LSM340GE3/TR13 has a total power dissipation of 0.072 Watts, a forward surge current of 7A (8.3ms), a junction temperature of 150°C, a forward voltage drop of 1V at a forward current of 3A, and a maximum reverse recovery time (trr) of 12ns.

Conclusion

The LSM340GE3/TR13 is a single rectifier diode designed to meet high-efficiency, low-voltage application requirements. It features low forward voltage, high speed, and low total power dissipation, making it ideal for many high-speed, low-voltage applications. Understanding its basic working principle and specifications can help you decide if this diode is the best choice for your circuits.

The specific data is subject to PDF, and the above content is for reference

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