Allicdata Part #: | LTC4444IMS8E#PBF-ND |
Manufacturer Part#: |
LTC4444IMS8E#PBF |
Price: | $ 2.58 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Linear Technology/Analog Devices |
Short Description: | IC DRVR NCH MOSFET 8MSOP |
More Detail: | Half-Bridge Gate Driver IC Inverting 8-MSOP-EP |
DataSheet: | LTC4444IMS8E#PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.34360 |
25 +: | $ 1.79928 |
100 +: | $ 1.42015 |
Current - Peak Output (Source, Sink): | 2.5A, 3A |
Base Part Number: | LTC4444 |
Supplier Device Package: | 8-MSOP-EP |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 8ns, 5ns |
High Side Voltage - Max (Bootstrap): | 114V |
Input Type: | Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 1.85V, 3.25V |
Voltage - Supply: | 7.2 V ~ 13.5 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The LTC4444IMS8E#PBF is a powerful gate driver IC that offers a variety of features to help designers bring efficient, robust and cost-effective products to market quickly. It is a part of the total Power Management IC (PMIC) family of products, specifically the Gate Driver subcategory. It is designed to control, protect and optimize power supply applications. This device is suitable for switching applications in industrial, consumer, medical and automotive applications.
The LTC4444IMS8E#PBF is capable of driving up to 8 parallel gates, as well as up to 8 parallel gate drives at the same time. The gate drive voltage can reach over 20V, making it suitable to drive a wide variety of MOSFETs in many different applications. Additionally, four gate terminals offer the capability to set the gate share according to the requirements of each power application, simplifying the components selection and maximising the efficiency of the power supply.
The LTC4444IMS8E#PBF features multiple protection features to ensure safe operation. It implements the industry-leading Over Voltage, Over Current and Thermal Shutdown protection, as well as soft start technology that prevents inrush current when the circuit is powered up. Furthermore, integrated under-voltage protection, ESD protection and cycle-by-cycle current protection provide safety and system robustness, as well as a decrease in the number of external components required.
The principal of operation is based on the switching of transistors, which are activated by a voltage higher than the supply voltage. However, the LTC4444IMS8E#PBF uses an H-bridge rather than a single transistor. An H-bridge is a circuit that uses four transistors connected in the form of a bridge and which allows the implementation of reversible polarity control by controlling the two ends of the bridge. When all four transistors are energised, the voltage of the controlled circuit is connected to ground, thus turning off the output. On the other hand, when two transistors are energised, one end of the bridge is Connected to the supply voltage while the other end is connected to ground, thus activating the output.
In addition to its multiple safety features, the LTC4444IMS8E#PBF also includes high speed precision threshold sensors, automotive level fault tolerance and fast start up. The LTC4444IMS8E#PBF is also capable of driving MOSFET for reverse voltage applications. This means it’s easy to integrate into AC-DC and DC-DC switch mode applications, making this gate driver suitable for a variety of power supply solutions. This makes it an ideal choice for designers who need a robust and high performance Gate Driver IC.
The specific data is subject to PDF, and the above content is for reference
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