LTC4449EDCB#TRPBF Allicdata Electronics
Allicdata Part #:

LTC4449EDCB#TRPBF-ND

Manufacturer Part#:

LTC4449EDCB#TRPBF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Linear Technology/Analog Devices
Short Description: IC SYNC MOSFET DRIVER N-CH 8DFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-DFN (2x...
DataSheet: LTC4449EDCB#TRPBF datasheetLTC4449EDCB#TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): 3.2A, 4.5A
Base Part Number: LTC4449
Supplier Device Package: 8-DFN (2x3)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 8ns, 7ns
High Side Voltage - Max (Bootstrap): 42V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 3V, 6.5V
Voltage - Supply: 4 V ~ 6.5 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The LTC4449EDCB#TRPBF is part of the family of advanced power management integrated circuits (PMICs) from Linear Technology. It is a high-speed, low-threshold, P-channel MOSFET driver specifically designed for use in high-frequency switching applications. The device can switch use at frequencies up to 10MHz, allowing it to be used in a variety of applications, such as switching power supplies, battery charging circuits, and other switching applications where power managementcontrol is needed.

The LTC4449EDCB#TRPBF is a single-channel, high-speed MOSFET driver, designed to drive low-threshold (VGSMAX ≤ –2V) N-channel enhancement-mode power MOSFETs in such high-speed switching applications. Its optimized high-frequency performance makes it suitable for pulse-width modulation (PWM) applications, as well as high-speed switching applications in general. The device has an operating temperature range of –40°C to +85°C and can operate with power supplies up to +18V.

The LTC4449EDCB#TRPBF has a maximum output peak current of 1.4A and an output peak clamp voltage of 18V. The device also features a high-speed threshold voltage of 4.5V and a maximum off-state current of 3.5 µA. The device includes a slew rate control feature for adjustable drive current and low output capacitance, enabling high-current operation at high-frequencies.

The output of the LTC4449EDCB#TRPBF consists of a low-threshold deactivated gate and driver output (SW), and a protected high-threshold activated gate output (MOSFET’s gate). The protected activated gate output is designed to drive an N-channel enhancement-mode power MOSFET. The device provides overcurrent protection,short-circuit current-limit protection and reverse-battery protection. The low-activated MOSFET threshold allows for fast switching and high-efficiency operation.

The LTC4449EDCB#TRPBF has a wide variety of application possibilities including battery charging circuits, embedded controllers, LCDs, DC-DC converters, AC-DC converters, motor drivers and bus termination applications. It is also used in high-current switching applications such as in the circuits for battery balancing and DC-DC power supplies. The device can also be used in battery charging, battery management, and supercapacitor charging applications, where its low threshold voltage allows for fast and efficient operation.

The working principle of the LTC4449EDCB#TRPBF can be described as illustrated in Figure 1. When the load is connected, a logic low on the input of the device turns the MOSFET driver on, resulting in a voltage drop across the MOSFET. The fall of the voltage on the SW pin triggers the on-state current limit setting, limiting the maximum current through the MOSFET. When the load is removed and the input voltage is returned to its high state, the device will deactivate the MOSFET and the voltage on the MOSFET’s gate will return to its high state.

Figure 1: Working principle of the LTC4449EDCB#TRPBF

In conclusion, the LTC4449EDCB#TRPBF is an advanced, high-speed MOSFET driver with a wide range of applications. Its low-threshold voltage and high switching frequency make it an ideal solution for high-efficiency and high-current switching applications.

The specific data is subject to PDF, and the above content is for reference

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