M25P10-AVMN6PYA Allicdata Electronics
Allicdata Part #:

M25P10-AVMN6PYA-ND

Manufacturer Part#:

M25P10-AVMN6PYA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1M SPI 50MHZ 8SO
More Detail: FLASH - NOR Memory IC 1Mb (128K x 8) SPI 50MHz 8-...
DataSheet: M25P10-AVMN6PYA datasheetM25P10-AVMN6PYA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: M25P10
Description

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The M25P10-AVMN6PYA is a non-volatile memory device suitable for applications requiring low-power and a large number of space. It is a memory device with the characteristics of both Flash and Serial NOR Flash memory, combining with the advantages of both making it suitable for a variety of embedded applications.

The M25P10-AVMN6PYA is normally a single-die Flash memory with built-in voltage translation and current-limiting capability. It is also available in an 8-lead SOIC package and is usually programmed with a SPI interface. It is suited for applications such as automotive, medical, security and many more that require a secure user data memory solution.

The M25P10-AVMN6PYA operates from 2.7 to 3.6V, featuring 4Kbytes of programmable code and 4Kbytes of data memory. The M25P10-AVMN6PYA also features a low write-protection voltage, greatly reducing the chance of accidentally transmitting destructive signals to the device. For better security, the data stored in the M25P10-AVMN6PYA is protected against both erase and write-access. The M25P10-AVMN6PYA also supports the Write-protected Security Feature Set (WSFS) which allows the user to fully configure the device to suit their needs.

The M25P10-AVMN6PYA’s working principle is based on the concept of reprogramming Flash memory cells. Each Flash memory cell contains two transistors, one of which is controlled by the write voltage applied to the memory cell and the other by the read voltage. The memory cell is programmed and erased in single bits via the Flash programming algorithm. In order to program a single bit, the voltage applied to the memory cell is increased to the write voltage and applied for a short period of time. Erasing a single bit is accomplished by decreasing the voltage applied to the memory cell to the erase voltage and applying it for a longer period of time.

The M25P10-AVMN6PYA is ideal for applications that require the storage of large amounts of data, such as automotive and security applications. The memory device can store up to 8Mbytes of data, while still providing high-speed programming and fast retrieval. The device is completely compatible with all SPI-type interfaces and is programmed using a conventional serial protocol. Additionally, the M25P10-AVMN6PYA includes both internal hardware and software protection mechanisms that further enhance its reliability and performance.

The M25P10-AVMN6PYA is a non-volatile memory device that offers a cost-effective solution for applications requiring a large amount of memory and a high degree of reliability. The device is programmed with a single SPI-type interface, enabling it to be integrated into any existing embedded system. Additionally, the device features a low write-protection voltage and reliable data protection mechanisms, making it an ideal choice for applications that require secure user memory solutions.

The specific data is subject to PDF, and the above content is for reference

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