M25P05-AVDW6TP TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Kb (64K x 8)
Clock Frequency:	50MHz
Write Cycle Time - Word, Page:	15ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP
Base Part Number:	M25P05-A

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M25P05-AVDW6TP TR Memory: Application Field and Working Principle

Introduction

M25P05-AVDW6TP TR is a type of non-volatile memory (NVM). It is a multi-purpose, single chip memory device that can be used for a wide variety of applications, including automotive and consumer electronics. This memory device is available in two main versions: the standard M25P05-AVDW6TP TR and the extended temperature version M25P05-AVDW6TP TR-ET. It has a wide operating voltage range of 1.8 to 3.6V, and can operate in temperatures as low as -40°C.

Application Field

M25P05-AVDW6TP TR is used in many applications including consumer electronics such as MP3 players, cell phones, and PDAs. It is also commonly used in automotive applications to store data and instructions for dashboards, airbag systems, and engine control modules. Additionally, it is found in industrial applications such as machine controllers, lighting systems, and medical equipment.

Features

M25P05-AVDW6TP TR offers several benefits that make it an ideal choice for memory applications. Firstly, it has a wide operating voltage range that allows it to function in many different voltage requirements. Secondly, its extended temperature range makes it suitable for automotive and industrial applications. Thirdly, it has a power-on reset that safeguards data by maintaining the most recent memory contents even when power is suddenly lost. Finally, it has a built-in enhanced infrared (IR) data protection feature that protects data from accidental erasure and corruption caused by exposure to external electromagnetic fields.

Operating Modes

M25P05-AVDW6TP TR features several operating modes, including active, idle and deep power-down. The active mode includes read and write operations while the idle mode defers reads and writes until the chip is ready again. The deep power-down mode completely shuts off power to the device to maximize power savings, but requires longer recovery period.

Instructions

M25P05-AVDW6TP TR supports several different instruction sets to control memory operations. The most commonly used instruction set is the Serial Peripheral Interface (SPI) command instruction set. This set is used to read, write, and erase the memory. Additionally, the Enhanced Single Pin Interface (ESPI) and System Management Bus (SMBus) command instruction sets are also supported.

Organization

M25P05-AVDW6TP TR is organized as 256Kx8 bits, which means that it has 256,000 memory cells and each cell stores 8 bits of data. Each memory cell can store 8-bit data codes in the range of 0-255. Since the total data capacity is 256,000 bits, the total storage capacity is 32K bytes.

Working Principle

M25P05-AVDW6TP TR utilizes a one-transistor, one-capacitor (1T-1C) architecture to store data. The transistor-capacitor combination forms a flip-flop which is capable of storing a single bit of data. To write data to the memory, an electronic signal is sent to the control gate of the transistor, which knocks an electron off of the capacitor. This change in the electrons within the capacitor creates a stored train of binary code which is used to store the data. To read data, an electron is sent to the control gate of the transistor, and the resulting charge that is passed through the transistor is measured. Depending on the amount of charge present, the value is either zero or one which corresponds to the data that has been stored.

Conclusion

M25P05-AVDW6TP TR is a versatile and reliable type of non-volatile memory that is suitable for a wide variety of applications, such as automotive and consumer electronics. Its wide operating voltage range, extended temperature range, power-on reset, and data protection features make it an ideal choice for memory solutions. The memory is organized as 256Kx8 bits, and utilizes a one-transistor, one-capacitor architecture for storing data. This architecture allows for relatively quick read and write operations, making it a great choice for applications that require rapid data transfer.

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