
Allicdata Part #: | M25P20-AV3D11-ND |
Manufacturer Part#: |
M25P20-AV3D11 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | SERIAL NOR SLC 2MX1 3.0V 2M DIE |
More Detail: | Memory IC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The M25P20-AV3D11 is a high-performance memory device designed for a variety of memory applications. It is a low-power, high-speed flash memory, with a wide range of operating temperature range of -40℃ to +85℃. M25P20-AV3D11 is a serial Flash memory device which utilizes a four-wire serial broadcast protocol for communication purposes. It is packaged in an 8-pin plastic UFDN or SOIC package.
The M25P20-AV3D11 allows the system to access data quickly and efficiently with a serial data transfer rate from 150Mbps to 104Mbps. Its advanced internal architecture provides an extremely fast program and erase time, which makes this Flash device particularly suitable for rapidly updating storage in a variety of embedded systems.
The M25P20-AV3D11 is designed to provide a high-speed data transfer rate, low-power operation, and increased capacity in a single Flash memory device. It provides 340K bytes of non-volatile memory with a low write time of 20ns. It also features a space-saving 8-pin package design and supports an array of standard serial commands suitable for a variety of applications.
M25P20-AV3D11 application field includes automotive infotainment systems, digital cameras, mobile phones and other embedded applications. It is widely used in industrial control systems, PLCs, test and measurement equipment and automotive navigation systems. Moreover, the M25P20-AV3D11 can be used in the field of medical imaging systems and network switches.
The working principle of the M25P20-AV3D11 memory device is based on Flash technology, which utilizes small blocks of Flash memory cells to store information. These Flash memory cells are organized into rows and columns, and each cell contains a small amount of memory. To write or modify a data to the M25P20-AV3D11, a current is applied to a row and column address, causing an electronic charge to be placed in the certain memory cell. To read the data stored in the memory cell, the device applies a voltage to the cell, which allows the device to detect the charge stored in the cell.
The M25P20-AV3D11 also includes a built-in ECC (Error Correction Code) system, which is responsible for ensuring accuracy and reliability of data stored in Flash memory. This system scans all bits of data stored in memory and if any bit is found to be corrupt, the system can automatically correct the bit, thereby ensuring data accuracy and integrity.
The M25P20-AV3D11 also supports a variety of security features, such as the Write Protect pin, the Security Register and the Lock Bits. These features are used to protect the stored information from being modified or deleted. In addition, the M25P20-AV3D11 provides mechanisms that allow the user to protect specific addresses or blocks of memory from being read or written.
The M25P20-AV3D11 can also detect and correct a wide variety of errors and provide an improved level of data integrity with its internal Built-in ECC. By using this feature, the system can detect and correct single and multiple-bit errors, thereby ensuring data accuracy and reliability.
In summary, the M25P20-AV3D11 required for variety embedded memories applications due to its ease of use and excellent performance. It is a high performance, low-power, wide temperature range and highly reliable memory device. Its Advance internal architecture provides an extremely fast programming and erase times, which makes this Flash device particularly suitable for rapidly updating storage in a variety of embedded systems. Moreover, the built-in ECC feature monitors the stored data ensuring data accuracy and reliability.
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