M58WR032KB70ZB6E Allicdata Electronics
Allicdata Part #:

M58WR032KB70ZB6E-ND

Manufacturer Part#:

M58WR032KB70ZB6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 56VFBGA
More Detail: FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 66MH...
DataSheet: M58WR032KB70ZB6E datasheetM58WR032KB70ZB6E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Write Cycle Time - Word, Page: 70ns
Base Part Number: M58WR032
Supplier Device Package: 56-VFBGA (7.7x9)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 70ns
Series: --
Clock Frequency: 66MHz
Memory Size: 32Mb (2M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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M58WR032KB70ZB6E Application Field and Working Principle

M58WR032KB70ZB6E (M58WR032KB70ZB6E) is a type of memory device commonly used in electrical and computerized equipment. Memory devices are essential components of all computers, whether it be a desktop, laptop, or mobile device. The M58WR032KB70ZB6E is part of a series of memory devices produced by Samsung Electronics. It is designed for use in areas where space and power consumption are at a premium, such as embedded systems or space-constrained environments. This device is also suitable for use in secure military and aerospace applications.

The M58WR032KB70ZB6E operates on a CMOS DDR3L (Double Data Rate Type 3 Low-power) supply voltage. This device operates at a maximum speed of 1600 Mbps as well as providing an operating voltage range of 1.2V-1.5V. This variation in voltage is ideal for devices that need to conserve energy while still providing efficient data transfer speeds. The M58WR032KB70ZB6E can store up to 32M bytes of data, making it suitable for a variety of applications.

The M58WR032KB70ZB6E memory device is characterized by its speed, low power consumption, and data storage capacity. It is a type of low-frequency, single-ended memory suitable for applications that require data transfer and storage, while also needing to conserve system power. The device is also capable of data multiplexing, which allows it to access different ports simultaneously at high speeds.

The M58WR032KB70ZB6E memory device works by writing and reading information from memory cells in order to store it. The device stores data in the form of electrical signals, which can then be manipulated or retrieved for use. The device is typically interfaced with a computing device to allow the data to be stored and recallable. To do this, the device must process commands sent by the memory controller, which then allows the stored memory cells to be read and written.

The M58WR032KB70ZB6E memory device is suitable for use in a variety of applications, but its main usage is in emerging embedded system designs, including Internet of Things (IoT) applications, handheld and wrist wearables, gaming consoles, and cameras. It is also suited for applications where high data transfer speeds and low power consumption is required. The device is an ideal option for engineers looking for a reliable memory solution for their embedded system designs.

In conclusion, the M58WR032KB70ZB6E is a reliable and efficient memory device suitable for use in a variety of applications. It provides high data transfer speeds and low power consumption, while also providing a good amount of data storage capacity. Engineers looking for a reliable memory solution for their embedded system designs can find comfort in knowing that the M58WR032KB70ZB6E is up to the task.

The specific data is subject to PDF, and the above content is for reference

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