M58WR064KT70ZB6F TR

Write Cycle Time - Word, Page:	70ns
Base Part Number:	M58WR064
Supplier Device Package:	56-VFBGA (7.7x9)
Package / Case:	56-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 2 V
Memory Interface:	Parallel
Access Time:	70ns
Series:	--
Clock Frequency:	66MHz
Memory Size:	64Mb (4M x 16)
Technology:	FLASH - NOR
Memory Format:	FLASH
Memory Type:	Non-Volatile
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Memory: M58WR064KT70ZB6F TR

Memory is the key component used by a computer processor to store information for immediate use. It allows for the rapid retrieving and manipulating large sets of data, enabling faster retrieval and processing than ever before. The M58WR064KT70ZB6F TR is a type of memory module used to store data in a variety of applications, from embedded systems to supercomputers. This article will discuss the applications of the M58WR064KT70ZB6F TR and its working principle.The M58WR064KT70ZB6F TR is a type of synchronous dynamic random access memory (SDRAM) module. It is a 64-bit memory module, with a clock speed of up to 740 MHz and a peak transfer rate of 7.4GB/s. It can operate at a voltage of 1.8V and has a capacity of 512MB. It is ideal for applications that require fast data retrieval and low latency, such as video streaming and server applications.The M58WR064KT70ZB6F TR modules are commonly used in embedded systems, as they are highly reliable and have a low power consumption, thus making them ideal for power-sensitive applications. They can be seen in automotive, medical and industrial control systems, which require high-performance memory. Furthermore, they are also used in supercomputers that require large amounts of memory, as the modules offer an effective way to store huge amounts of data quickly.The M58WR064KT70ZB6F TR works on the principle of synchronous dynamic random access memory (SDRAM). This type of memory relies on a synchronous transfer of data to and from memory cells, by sending two signals called command and address signals. The command signal is used to control the operation of a memory module, while the address signal is used to specify the address of the target data. Once a command and address are sent, the memory module decodes them and sends the corresponding data stored in its cells. This data is quickly transferred to a specified memory address and can be retrieved whenever needed.Moreover, the M58WR064KT70ZB6F TR uses an advanced data bus architecture called Advanced DRAM (ADR), which is designed for higher speed data transfer. ADR uses ‘channels’ and ‘banks’ to increase the transfer rate, and supports up to eight data channels. This allows for up to eight independent data channels to be used concurrently, thus enabling high-speed data transfer.In conclusion, the M58WR064KT70ZB6F TR is a type of memory module used in a variety of applications, from embedded systems to supercomputers. It operates on the principle of synchronous dynamic random access memory (SDRAM) and uses an advanced data bus architecture known as Advanced DRAM (ADR). It has a clock speed of up to 740 MHz and a peak transfer rate of 7.4GB/s, making it ideal for applications that require fast data retrieval and low latency.

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