M58WR064KT7AZB6E

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M58WR064KT7AZB6E is an industrial-grade memory product developed by the Japanese company, Toshiba. It is mainly used in industrial-grade data storage applications. It features high-speed data transfers, high memory capacity, and excellent stability.The M58WR064KT7AZB6E is an 8Mb, 16Mb, 32Mb and 64Mb industrial-grade non-volatile memory. It is a serial data output-type, asynchronous NAND Flash memory device based on a multiplexed 8-bit bus and supports a wide variety of power supply voltage and package types. The M58WR064KT7AZB6E of Toshiba is suitable for industrial applications such as industrial control and factory automation systems, office automation systems, and large-scale video surveillance systems. Because of its cost-effective, low power and high stability performance, the M58WR064KT7AZB6E is widely used in industrial applications. It has the ability to withstand extreme temperatures, and its power consumption is very low - making it ideal for applications that need to maintain a reliable and stable performance in extreme environments.The M58WR064KT7AZB6E is a NAND Flash memory device that features a series of non-volatile memory cells. It is a multi-chip module composed of four chips, and its memory cells are connected in a specific arrangement to achieve a synchronization capability. In addition, it features a built-in ECC (Erasure Correction Code) for error-free data transfers.The M58WR064KT7AZB6E is based on the NAND Flash memory architecture. This architecture consists of two components - NAND gates and floating gate transistors. The NAND gates combine signals to provide control signals, while the floating gate transistors are used to store data and control the operation of the memory device. The NAND Flash memory device also uses an ECC algorithm to detect errors and to then detect and correct them.To ensure reliable performance, the M58WR064KT7AZB6E features an integrated ESR (Error Status Register) that can store a status flag for every error, as well as a write protect pin. The write protect pin can be used to protect data from erasing or damage. The ESR also enables the M58WR064KT7AZB6E to support different types of data access, such as fast copy and random read, as well as various data transfer methods such as clock-synchronized transfers and parallel output transfers.In summary, the M58WR064KT7AZB6E is a cost-effective, low power and high stability memory product developed by the Japanese company, Toshiba. It is mainly used in industrial-grade data storage applications and features a series of non-volatile memory cells with a built-in ECC for error-free data transfers. It also features an integrated ESR and a write protect pin for reliable performance. Furthermore, it is suitable for industrial applications such as factory automation systems, large-scale video surveillance systems, and office automation systems.

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