M58WR032KB70ZB6Z Allicdata Electronics
Allicdata Part #:

M58WR032KB70ZB6Z-ND

Manufacturer Part#:

M58WR032KB70ZB6Z

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 56VFBGA
More Detail: FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 66MH...
DataSheet: M58WR032KB70ZB6Z datasheetM58WR032KB70ZB6Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 70ns
Base Part Number: M58WR032
Supplier Device Package: 56-VFBGA (7.7x9)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 70ns
Series: --
Clock Frequency: 66MHz
Memory Size: 32Mb (2M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is something without which computers and related technology would not be able to function. Memory can be defined as the capacity of a system to remember, retain and recall information. M58WR032KB70ZB6Z is one such type of memory which is widely used in computers and related technology.

M58WR032KB70ZB6Z is a type of memory that is very fast, efficient, and reliable. It is used in a variety of applications such as network communication, audio/video transmission, data processing, mobile communications, and robotics. The M58WR032KB70ZB6Z is a great choice for any system or application that requires a high-performance, high-speed memory solution.

M58WR032KB70ZB6Z memory consists of 2GHz burst frequency, 32Kb of memory, and 7 cycles of latency. It is based on the DDR SDRAM memory technology and is compliant with the JEDEC DDR-266 (PC2100) SDRAM standard. The maximum possible data rates are over 2,000 MB/s. M58WR032KB70ZB6Z memory is highly reliable and is designed to handle an MTBF score of 400,000 hours. It has an operating temperature range of 0 - 85 °C and operates with an input voltage of 2.6V.

The working principle of M58WR032KB70ZB6Z is fairly simple: data is stored in the memory cell as a charge on a capacitor, and the stored charge is used to represent data. The data is read and written by applying the voltage to the proper circuit connections and controlling the charge or discharge of the capacitor. This type of memory works by creating and managing a series of cells which are made up of two transistors and a capacitor. By altering the charge of the capacitor, the memory cell can be used to store and retrieve data in the form of electrical signals.

M58WR032KB70ZB6Z is widely used in notebooks, printers, GPS systems, and a variety of other devices. Its combination of speed, capacity, and power efficiency makes it ideal for applications that require fast response times and large memory requirements. This memory has proven to be a reliable, cost-effective choice for many applications and is currently one of the most widely used types of memory available.

M58WR032KB70ZB6Z memory is a great choice for any application that needs a reliable, high-performance memory solution. Its combination of speed, capacity, low latency, and efficiency makes it perfect for a wide range of applications. With its high MTBF score and reliable operation, M58WR032KB70ZB6Z is an ideal choice for any system or application that requires reliable and cost-effective memory performance.

The specific data is subject to PDF, and the above content is for reference

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