M58WR032KL70ZA6U TR Allicdata Electronics
Allicdata Part #:

M58WR032KL70ZA6UTR-ND

Manufacturer Part#:

M58WR032KL70ZA6U TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 44VFBGA
More Detail: FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 66MH...
DataSheet: M58WR032KL70ZA6U TR datasheetM58WR032KL70ZA6U TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 70ns
Base Part Number: M58WR032
Supplier Device Package: 44-VFBGA (7.5x5)
Package / Case: 44-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 70ns
Series: --
Clock Frequency: 66MHz
Memory Size: 32Mb (2M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The M58WR032KL70ZA6U TR is an example of a type of memory used in a variety of applications. It is a high-density, high-performance static random-access memory (SRAM) used in a number of industrial, medical and automotive applications. The M58WR032KL70ZA6U TR has low power consumption, a low standby current and a wide operating temperature range. This makes the device well suited for use in a variety of applications where reliable, low power operation is needed.

The M58WR032KL70ZA6U TR is available in a variety of package styles and is also available in a range of densities ranging from 32K to 512K. The device also features a synchronous burst operation, a page mode, and a programmable burst length. All these features make the device suitable for use in applications that require high levels of data throughput, such as digital signal processing, communications, memory controllers, and automotive systems. The device also features an optional write protect signal and error correction codes, making it especially suitable for use in industrial and automotive applications.

In terms of its working principle, the M58WR032KL70ZA6U TR works by utilizing dynamic cell structures to store data. Each cell in the SRAM device is made up of a transistor and a capacitor. The transistor transmits a data signal to the capacitor, and the capacitor stores the data. When the data needs to be read, the transistor reverses the process and the capacitor is discharged, thus enabling the data to be read from the device. This data read process is known as a read cycle.

The M58WR032KL70ZA6U TR also has a write cycle. During the write cycle, the transistor is used to transmit a write signal to the capacitor and the capacitor is charged in order to store the data. This write cycle is faster than the read cycle and is used to write data to the SRAM memory device.

The M58WR032KL70ZA6U TR is an example of a type of SRAM memory device used in a variety of applications. It has low power consumption, a low standby current and a wide operating temperature range. It also features synchronous burst operation, a page mode and a programmable burst length. These features make the device suitable for use in a number of industrial, medical and automotive applications. Furthermore, the device utilizes dynamic cell structure combined with read and write cycles to store and retrieve data.

The specific data is subject to PDF, and the above content is for reference

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