M58WR032KB70ZB6F TR Allicdata Electronics
Allicdata Part #:

M58WR032KB70ZB6FTR-ND

Manufacturer Part#:

M58WR032KB70ZB6F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 56VFBGA
More Detail: FLASH - NOR Memory IC 32Mb (2M x 16) Parallel 66MH...
DataSheet: M58WR032KB70ZB6F TR datasheetM58WR032KB70ZB6F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 70ns
Base Part Number: M58WR032
Supplier Device Package: 56-VFBGA (7.7x9)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 70ns
Series: --
Clock Frequency: 66MHz
Memory Size: 32Mb (2M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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M58WR032KB70ZB6F TR is a type of memory product manufactured by Micron Technology. It is a Serial NOR Flash memory device, designed to provide high-capacity and high-performance data storage. The device is suitable for a wide range of applications, from industrial and automotive systems to consumer applications.

M58WR032KB70ZB6F TR is equipped with 16 Mbit of non-volatile memory and is capable of transferring data at speeds up to 133MHz. The memory device supports both Single Data Rate (SDR) and Double Data Rate (DDR) transfer protocols, and has a low-power standby mode. The device is highly reliable and cost-effective, making it suitable for a variety of applications.

The device is capable of storing up to 2 billion bits of information. This makes it ideal for a range of applications, including high-performance data storage, automotive systems and industrial automation applications. The device is also suitable for applications requiring low-power standby mode, such as battery-powered mobile devices.

The device’s advanced architecture ensures fast boot times and extended battery life in battery-operated systems. It also enhances system performance by allowing multiple operations to be performed in parallel. The device supports error detection and correction techniques, making it highly reliable.

M58WR032KB70ZB6F TR offers various data storage options. It supports a wide range of operating modes, including single-level cell (SLC), multiple-level cell (MLC) and triple-level cell (TLC) flash. The device also supports error correction code (ECC) and Advanced Wear-Leveling technology.

The device’s Advanced Wear-Leveling (AWL) technology enables it to distribute the data over multiple physical blocks and reduce the wear of the NAND cells. This increases the life span and reliability of the memory device. The device also offers advanced End-to-End Data Protection (EEDP) features to detect, analyze, and correct read and write errors.

The device offers a wide variety of interfaces, including HyperBus, Quad SPI, and Quad I/O, which makes it compatible with the majority of system designs. The device also offers a variety of package options, including CSP, FBGA, and TFBGA.

M58WR032KB70ZB6F TR is a reliable, high-capacity and cost-effective memory device suitable for a wide range of applications. Its advanced architecture ensures fast boot times and extended battery life in battery-operated systems. The device supports a variety of data storage options and offers a wide variety of interfaces and package options.

The specific data is subject to PDF, and the above content is for reference

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