
MAP4KE100AE3 Circuit Protection |
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Allicdata Part #: | 1086-4122-ND |
Manufacturer Part#: |
MAP4KE100AE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 85.5V 137V DO204AL |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 137V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Current - Peak Pulse (10/1000µs): | 2.9A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 95V |
Voltage - Reverse Standoff (Typ): | 85.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes
Transient Voltage Suppressor Diodes (TVSs) are specialized devices which provide protection against electrical transients. It is designed to withstand large surges in voltage and often comes in the form of a diode or semiconductor. They are commonly used in applications that require protection from lightning strikes, power interruption, and ESD.
The MAP4KE100AE3 is a unidirectional Transient Voltage Suppressor (TVS) diode designed to protect sensitive equipment from overvoltage transients. It is designed for use in a variety of applications such as consumer electronics, automotive, computers, telecommunications, and industrial systems. The device is available with a wide range of breakdown voltages from 6.0V to 20V.
The MAP4KE100AE3 is designed to protect sensitive equipment from transient voltage events such as electrostatic discharge (ESD), electro-magnetic interference (EMI), and lightning. It is constructed of a silicon chip and formed into a flat, low-profile package. The device features low-breakdown voltage, high clamping capability, low leakage current, and low dynamic resistance. The device is also capable of operating at high temperatures.
The working principle of the MAP4KE100AE3 is based on the avalanche breakdown process. When a high voltage is applied to the diode, the electric field created causes electrons to break away from the covalent bonds in the junction region, creating an avalanche of electrons. This process results in an increase in the current flowing through the diode whilst maintaining a constant voltage. The device is designed to absorb the energy from the transient voltage event, diverting it away from sensitive equipment.
The MAP4KE100AE3 is designed for a wide range of application fields. It is commonly used in consumer electronics, providing protection against lightning strikes, power interruption, and ESD. It is also used in automotive, computers, telecommunications, and industrial systems. The device is suitable for use in applications such as servers, telecom systems, and automotive lighting.
The MAP4KE100AE3 is a high-performance diode designed to protect sensitive equipment from transient voltage events such as lightning strikes, static discharge and electro-magnetic interference. The device features low-breakdown voltage, high clamping capability, low leakage current, and low dynamic resistance. The MAP4KE100AE3 is suitable for use in a wide range of application fields such as consumer electronics, automotive, computers, telecommunications, and industrial systems.
The specific data is subject to PDF, and the above content is for reference
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MAP4KE24A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
MAP4KE20AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V DO2... |
MAP4KE6.8AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V DO20... |
MAP4KE82A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V DO20... |
MAP4KE150A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V DO204... |
MAP4KE36CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V DO2... |
MAP4KE22A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
MAP4KE47CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V DO2... |
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MAP40-1005 | Bel Power So... | 162.74 $ | 49 | AC/DC CONVERTER 5V 40WOpe... |
MAP40-3105G | Bel Power So... | 50.86 $ | 1000 | AC/DC CONVERTER 5V 12V -5... |
MAP4KE68AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 58.1V 92V DO204... |
MAP4KE7.5A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V DO20... |
MAP4KE91CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V DO20... |
MAP4KE100AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V DO20... |
MAP4KE20CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V DO2... |
MAP4KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V DO204... |
MAP4KE10CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V DO2... |
MAP4KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V DO204... |
MAP4KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V DO204... |
MAP4KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V DO2... |
MAP4KE43CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
MAP4KE82CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V DO20... |
MAP4KE160A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V DO204... |
MAP4KE160CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V DO204... |
MAP4KE400CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 342V 548V DO204... |
MAP4KE220CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 185V 328V DO204... |
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MAP42-1024G | Bel Power So... | 130.41 $ | 1000 | AC/DC CONVERTER 24V 40WOp... |
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