MAP4KE220AE3 Allicdata Electronics
Allicdata Part #:

1086-4190-ND

Manufacturer Part#:

MAP4KE220AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 185V 328V DO204AL
More Detail: N/A
DataSheet: MAP4KE220AE3 datasheetMAP4KE220AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 328V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 209V
Voltage - Reverse Standoff (Typ): 185V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MAP4KE220AE3 TVS Diode is a unidirectional Transient Voltage Suppressor (TVS) diode designed for protection against destructive factors in various electronic circuits. It comes with a peak pulse power rating of 1000 watts and a breakdown voltage of 22 volts. This diode is used for electronic circuit protection from external environmental elements, such as lightning, power surges, and other sources of electrostatic discharge.

The unique features of the MAP4KE220AE3 include low clamping voltage, high peak pulse current rating, very fast response time, small size, and low leakage current. It is suitable for use in multiple applications, such as AC and DC line protection, computer peripheral equipment, and communication equipment. Additionally, it is designed to meet the requirements of the Electronic Industries Alliance Standard 88A.

The working principle of the MAP4KE220AE3 is based on the principle of avalanche breakdown, where electrons are accelerated to a point where they gain enough energy to break away from the valence band into the conduction band. This then causes an avalanche current, which is capable of overloading and damaging the diode and other components of the circuit.

When the breakdown voltage is reached, the diode is able to withstand up to 10 times the breakdown voltage before breakdown occurs. The diode is constructed with a series of ultra-thin build-up layers in order to achieve a higher breakdown voltage and greater surge current capability. This allows the diode to provide optimum electro-static discharge (ESD) protection by diminishing the voltage to a safe level.

The MAP4KE220AE3 has a variety of applications, including computer peripheral equipment protection, portable electronic equipment protection, energy and power control system protection, telecommunication equipment protection, and in home and audio/video equipment. One of the most common areas of application for this diode is protection against lightning in automobiles, airplanes, ships, and other vehicles.

The MAP4KE220AE3 is ideal for providing effective protection against electrical threats in a wide range of electronic circuits, from large complex systems to small, low-power devices. Its high peak pulse power rating, low clamping voltage, and very fast response time make it an excellent choice for circuit protection. It is durable and durable enough to withstand the harshest of conditions, making it a reliable component for use in both domestic and industrial environments.

The specific data is subject to PDF, and the above content is for reference

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