MAP4KE68CAE3

Voltage - Clamping (Max) @ Ipp:	92V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	4.4A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	64.6V
Voltage - Reverse Standoff (Typ):	58.1V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Introduction to the MAP4KE68CAE3

MAP4KE68CAE3 is a type of transient voltage suppressor (TVS) diode, designed and manufactured by ON Semiconductor. The MAP4KE68CAE3 is a low-cost, high-performance, low-capacitance, unidirectional TVS diode. It offers superior protection against electrostatic discharge (ESD) and electrical fast transients (EFT), and its low-capacitance design minimizes degradation of high-speed data signals.

Specifications of the MAP4KE68CAE3

The MAP4KE68CAE3 is designed to suppress transient overvoltages in the range of 5.0 to 5.7 V. It has an operating voltage of 5.6 V and a maximum clamping voltage of 8.2 V. The device is composed of two separate diodes in a monolithic package and has a working temperature range of -55°C to +125°C, and a maximum peak power of 8.0 kW. The device also has a low forward and reverse leakage current.

Application Fields of the MAP4KE68CAE3

The MAP4KE68CAE3 TVS diode is designed primarily for use in automotive, consumer, and industrial applications. Common applications include ESD and EFT protection on input/output lines in computers, routers, and switches, and in off-board peripherals such as keyboards, mice, modems, and other connected devices. The device is also well-suited for use in sensitive electronic components and systems such as radio frequency (RF) systems and mobile phones.

Working Principle of the MAP4KE68CAE3

The MAP4KE68CAE3 TVS diode is designed to clamp transient surges to a safely managed level. When a transient surge is detected, the diode becomes forward biased and conducts current. This causes a voltage drop across the diode, effectively clamping the overvoltage to a safe level. As the surge dissipates, the diode will become reverse biased, stopping the flow of current and returning the voltage to its normal level. This process occurs in a fraction of a second, providing fast and reliable protection.

Conclusion

The MAP4KE68CAE3 is a high-performance, low-cost TVS diode and an ideal solution for ESD and EFT protection in automotive, consumer, and industrial applications. With its low-capacitance design and superior surge protection capabilities, the MAP4KE68CAE3 is a reliable and cost-effective solution for protecting sensitive electronic systems and components.

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