Allicdata Part #: | 1086-4168-ND |
Manufacturer Part#: |
MAP4KE16CAE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 13.6V 22.5V DO204AL |
More Detail: | N/A |
DataSheet: | MAP4KE16CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 22.5V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Current - Peak Pulse (10/1000µs): | 18A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 15.2V |
Voltage - Reverse Standoff (Typ): | 13.6V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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MAP4KE16CAE3 is a transient voltage suppressor (TVS) diode designed to protect sensitive equipment from electrostatic discharge damage. TVS diodes are semiconductor switching devices that provide a high degree of protection from ESD. In circuits where ESD can be a problem, the TVS diode acts as a shunt to shunt any ESD pulse across its junction. TVS diodes are typically characterized at different ESD voltages, with a certain value of capacitance to determine their effective electrical value.
MAP4KE16CAE3 is a diode designed for the protection of industrial equipment and other connected electronic devices from dangerous levels of high-voltage ESD (electrostatic discharge) pulses. It has an exceptionally low power consumption and a high level of ESD immunity. TVS diodes are well known for their high-speed switching capabilities and their ability to protect delicate electronics from the destructive buildup of static electricity or high-frequency noise. The MAP4KE16CAE3 is capable of a peak surge current of 8.1 A, and can effectively reduce the levels of transient voltage pulses by up to 18 V for up to 10 us.
The MAP4KE16CAE3 is a bi-directional diode, which means that it is capable of providing protection from both positive and negative ESD pulses. The diode is also designed to have a minimal capacitance and inductance, which allows for the rapid diode response to transient voltages. The diode is a bipolar device, meaning that it is composed of two diodes connected in opposite directions to provide more efficient protection, known as the avalanche breakdown. In the event of an ESD or transient voltage event, the diode becomes ashort circuit with a peak current capacity of up to 10 A, for a minimum of 6 ms.
The MAP4KE16CAE3 is designed to withstand ESD pulses up to 15 kV, and has a built-in sensitivity of ± 200 V. The diode has an external workspace of 31.5 mA, meaning that it is capable of handling extremely high-peak current pulses. The power consumption of the MAP4KE16CAE3 is very low, as it only requires 10 uA of current when in static state. The diode also features a high reliability, with a guaranteed thermal dissipation of 0.2 W and an operating temperature range of -40°C to +125°C.
In summary, the MAP4KE16CAE3 is a highly versatile and reliable transient voltage suppressor diode designed to protect sensitive electronic components from electrical shock. It is a bi-directional diode capable of withstanding high levels of ESD pulses, and has a very low power consumption with a high degree of reliability. The diode is easily integrated into many circuits, providing an effective and reliable solution to ESD protection.
The specific data is subject to PDF, and the above content is for reference
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