
Allicdata Part #: | 1086-4226-ND |
Manufacturer Part#: |
MAP4KE36AE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 30.8V 49.9V DO204AL |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 49.9V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Current - Peak Pulse (10/1000µs): | 8A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 34.2V |
Voltage - Reverse Standoff (Typ): | 30.8V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS diodes are widely applied in various areas of electronics and electrical engineering, including telecommunications, consumer electronics, automotive, medical equipment, and defense systems. A TVS diode, also known as a transient voltage suppression diode, is a device designed to protect electronic equipment from voltage transients, which are unpredictable, short-duration peak voltage spikes. By providing a fast-reacting response to an overvoltage, they help ensure that electronic components remain within their maximum operating capability limits.
The MAP4KE36AE3 is a voltage dependent, bi-directional TVS diode that is designed to provide robust protection against transients. It has a peak pulse power rating of 200W (10/1000µs) and a high peak pulse current of 6A (8/20µs). The diode has a low clamping voltage of 12.2V, providing great flexibility for circuit designers. The diode is provided in a miniature SOD-128F package, making it suitable for designers who require a small form-factor protection solution.
The working principle of the MAP4KE36AE3 is based on the avalanche breakdown effect, which occurs when a semiconductor junction is exposed to a reverse voltage that is greater than its breakdown voltage. In the avalanche breakdown effect, a large amount of current flows suddenly through the junction, resulting in a voltage clamping effect. As such, once the reverse voltage reaches a level greater than the breakdown voltage of the diode, any further increases in the transient voltage will be clamped and quickly dissipated as heat. The MAP4KE36AE3 utilizes this effect to protect a circuit from possibly damaging transients.
The MAP4KE36AE3 is suitable for a broad range of applications. It is intended for use in applications such as local area networks, where it can protect against electromagnetic interference (EMI) and transients. It can also be used in automotive systems to protect against load dump transients or engine-start transients up to 40V. Additionally, the diode can be used in medical applications for the EMI and line transients protection.
The MAP4KE36AE3 is an effective way of protecting sensitive electronic components from voltage transients. With its low clamping voltage and small form-factor, the diode is suitable for a wide range of applications and provides a robust, cost-effective solution for circuit protection.
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Part Number | Manufacturer | Price | Quantity | Description |
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MAP4KE62CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 53V 85V DO204AL |
MAP4KE24A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
MAP4KE20AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V DO2... |
MAP4KE6.8AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V DO20... |
MAP4KE82A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V DO20... |
MAP4KE150A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V DO204... |
MAP4KE36CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.8V 49.9V DO2... |
MAP4KE22A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
MAP4KE47CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.2V 64.8V DO2... |
MAP4KE130A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V DO204... |
MAP4KE300CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 256V 414V DO204... |
MAP4KE400A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 342V 548V DO204... |
MAP4KE9.1AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.78V 13.4V DO2... |
MAP40-1005 | Bel Power So... | 162.74 $ | 49 | AC/DC CONVERTER 5V 40WOpe... |
MAP40-3105G | Bel Power So... | 50.86 $ | 1000 | AC/DC CONVERTER 5V 12V -5... |
MAP4KE68AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 58.1V 92V DO204... |
MAP4KE7.5A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.4V 11.3V DO20... |
MAP4KE91CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 77.8V 125V DO20... |
MAP4KE100AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V DO20... |
MAP4KE20CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 17.1V 27.7V DO2... |
MAP4KE200A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 171V 274V DO204... |
MAP4KE10CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V DO2... |
MAP4KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V DO204... |
MAP4KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V DO204... |
MAP4KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V DO2... |
MAP4KE43CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
MAP4KE82CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 70.1V 113V DO20... |
MAP4KE160A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V DO204... |
MAP4KE160CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136V 219V DO204... |
MAP4KE400CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 342V 548V DO204... |
MAP4KE220CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 185V 328V DO204... |
MAP4KE16CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.6V 22.5V DO2... |
MAP42-1024G | Bel Power So... | 130.41 $ | 1000 | AC/DC CONVERTER 24V 40WOp... |
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