MAP4KE36AE3 Allicdata Electronics
Allicdata Part #:

1086-4226-ND

Manufacturer Part#:

MAP4KE36AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 30.8V 49.9V DO204AL
More Detail: N/A
DataSheet: MAP4KE36AE3 datasheetMAP4KE36AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 49.9V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes are widely applied in various areas of electronics and electrical engineering, including telecommunications, consumer electronics, automotive, medical equipment, and defense systems. A TVS diode, also known as a transient voltage suppression diode, is a device designed to protect electronic equipment from voltage transients, which are unpredictable, short-duration peak voltage spikes. By providing a fast-reacting response to an overvoltage, they help ensure that electronic components remain within their maximum operating capability limits.

The MAP4KE36AE3 is a voltage dependent, bi-directional TVS diode that is designed to provide robust protection against transients. It has a peak pulse power rating of 200W (10/1000µs) and a high peak pulse current of 6A (8/20µs). The diode has a low clamping voltage of 12.2V, providing great flexibility for circuit designers. The diode is provided in a miniature SOD-128F package, making it suitable for designers who require a small form-factor protection solution.

The working principle of the MAP4KE36AE3 is based on the avalanche breakdown effect, which occurs when a semiconductor junction is exposed to a reverse voltage that is greater than its breakdown voltage. In the avalanche breakdown effect, a large amount of current flows suddenly through the junction, resulting in a voltage clamping effect. As such, once the reverse voltage reaches a level greater than the breakdown voltage of the diode, any further increases in the transient voltage will be clamped and quickly dissipated as heat. The MAP4KE36AE3 utilizes this effect to protect a circuit from possibly damaging transients.

The MAP4KE36AE3 is suitable for a broad range of applications. It is intended for use in applications such as local area networks, where it can protect against electromagnetic interference (EMI) and transients. It can also be used in automotive systems to protect against load dump transients or engine-start transients up to 40V. Additionally, the diode can be used in medical applications for the EMI and line transients protection.

The MAP4KE36AE3 is an effective way of protecting sensitive electronic components from voltage transients. With its low clamping voltage and small form-factor, the diode is suitable for a wide range of applications and provides a robust, cost-effective solution for circuit protection.

The specific data is subject to PDF, and the above content is for reference

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