MAP4KE10AE3 Allicdata Electronics

MAP4KE10AE3 Circuit Protection

Allicdata Part #:

1086-4126-ND

Manufacturer Part#:

MAP4KE10AE3

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 8.55V 14.5V DO204AL
More Detail: N/A
DataSheet: MAP4KE10AE3 datasheetMAP4KE10AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 14.5V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 28A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 9.5V
Voltage - Reverse Standoff (Typ): 8.55V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes, short for Transient Voltage Suppressor diodes, are semiconductor devices that are used to protect semiconductor circuits from transient events. The over-voltage and over-current surges that could risk destruction of sensitive electronic components or systems can be safely dissipated away from the protected circuit.MAP4KE10AE3 is a type of TVS diodes with a bidirectional unidirectional peak power rating of 10A (10/1000μs).

MAP4KE10AE3 applications cover all varieties of semiconductor circuit protection from integrated circuits,discrete devices,logic protection,data lines, automobiles, portable electronic products,chemically etched lines, telecommunications, and many more. This wide range of application is due to the flexibility and versatility of TVS diodes, which can be used in both board and system level protection.

It works by detecting sudden unexpected power fluctuations, such as lightning spikes, load dump, and reverse bias, and immediately shunting them away from the protected circuit. As the TVS diode is reverse biased, a large potential barrier is formed across the p-n junction, inhibiting the flow of electrons and therefore blocking the surge current. When the forward current passes through the diode, the bias is further increased, thus further reducing the flow of current and protecting the circuit.

The MAP4KE10AE3 diode also has several features that make it ideal for protecting circuits from transient events. It has a low capacitance,low leakage current,and wide operating temperature range,making it suitable for a variety of application conditions. The diode has an ultra-low clamping voltage,measured at 4V,which ensures that the protection circuit is always clamped at that value,while still providing a snubber effect. It also has high surge ratings, enabling it to handle high-amplitude transient events without compromising performance.

In summary, MAP4KE10AE3 is one of the best protection diodes for protecting semiconductor circuits from unexpected power events. The diode is designed to work in both board and system level applications, and boasts many impressive features, such as low capacitance, low leakage current, wide operating temperature range, and high surge ratings. The diode is also suitable for a variety of conditions, making it ideal for protecting sensitive electronic components and systems.

The specific data is subject to PDF, and the above content is for reference

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