MAP4KE11AE3

Voltage - Clamping (Max) @ Ipp:	15.6V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	26A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	10.5V
Voltage - Reverse Standoff (Typ):	9.4V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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MAP4KE11AE3 TVS - Diodes application field and working principle

MAP4KE11AE3 Transient Voltage Suppression (TVS) diodes are designed to protect sensitive electronic components from over-voltage transients induced by circuit switching or lightning. With a lower forward voltage drop than a Zener diode, and low clamping voltage, these diodes can effectively suppress voltage transients in real time.MAP4KE11AE3 TVS diodes work in a similar manner to Zener diodes, in that they both require a reverse voltage for conduction, and both operate as the same device types. However, MAP4KE11AE3 differs from Zener diodes in that it has a much lower clamping voltage, and also has a larger breakdown voltage range.MAP4KE11AE3 can be used in a variety of applications, such as cellular phone base stations, telecoms, audio/video communications, and other specialized circuits that require high voltages and currents, as well as low capacitance. The high surge capability combined with low on-resistance makes it an ideal choice for such applications. It is also used for telecommunications, audio/video communications and other analog/digital communications, automotive systems, consumer electronics, and computer and data systems. Additionally, MAP4KE11AE3 can be used as a general TVS component for general rectification and suppression of high-magnitude electrical transients in a circuit.The working principle of MAP4KE11AE3 TVS diodes is fairly simple. A given forward voltage (Vf) is applied to the diode, and once the voltage reaches the breakdown voltage (Vbr), a current surge occurs. This current causes the diode to clamp the voltage transient, allowing it to be safely dissipated into the environment.The breakdown voltage of MAP4KE11AE3 is much lower than a Zener diode, and the diode can be arranged in a variety of configurations for different applications. One of the most common configurations used is the silicon avalanche diode, which is capable of providing a low clamping voltage and extremely fast response time.Additional features that make MAP4KE11AE3 an ideal choice for TVS applications include its low capacitance, high surge protection, and low on-resistance. The low capacitance means that it can be used safely with sensitive digital circuits, and the high surge protection ensures that all electrical transients are properly dissipated without causing any damage.All in all, MAP4KE11AE3 is an excellent choice for a wide range of applications, from telecoms to consumer electronics. Its low clamping voltage and high surge capabilities make it an ideal device for suppressing voltage transients in real time, making it a great choice for any application that requires protection against electrical transients.

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