MAP4KE130CA

Voltage - Clamping (Max) @ Ipp:	179V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	2.2A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	124V
Voltage - Reverse Standoff (Typ):	111V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Each industry today strives to work towards cutting edge electronic applications and design drives for its products. With the advent of industrialization and technology, it is now possible to put together cheap yet accurate circuits and components in such a way that it is both reliable and cost-effective. MAP4KE130CA TVS Diodes is one of the innovative products that caters to this requirement.MAP4KE130CA is a single-line TVS Diode, produced in the dual-neutered construction based on a silicon Schottky. It is suitable for use in applications such as automotive, industrial, telecommunication, electronic equipment, consumer electrical, computers and peripherals that require fast response, ultra low leakage and high surge capacity.The junction and internal design of the MAP4KE130CA TVS Diode is composed of highly doped drift layers, an integrated ESD protection diode formed between anode and cathode, and an internal P-type substrate. This substrate formation helps the MAP4KE130CA TVS Diode in its primary function, which is to protect against over-voltage events caused by electrostatic discharge (ESD) or other transient over-voltages.The MAP4KE130CA TVS Diode’s built-in ESD protection diode provides very fast response time and can absorb up to 400W of surge power. This fast response time ensures that transient voltage spikes or ESD is not passed through to the components it is supposed to protect. The device’s low clamping voltage ensures minimal power dissipation and provides better protection than conventional protection devices like Zener Diodes.In terms of its working principle, the MAP4KE130CA TVS Diode features a reverse-biased junction, which works as a galvanic shield between the input and output of the circuit, preventing excessive current flow and protecting the components from damage. When an over-voltage event occurs, the reverse biasing of the junction triggers the forward biasing of the diode, which then quickly clamps the voltage to a safe level, minimizing any risk of damage.Overall, the MAP4KE130CA TVS Diode performs fast and reliable clamping of over-voltage events, offering superior protection for a wide range of electronic applications. It is easy to install, costs less than many conventional protection devices, and has a longer life span. It is also a low leakage current device, ensuring dependable results even when left installed for long periods of time.

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