MAP4KE8.2A Allicdata Electronics
Allicdata Part #:

1086-4273-ND

Manufacturer Part#:

MAP4KE8.2A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 7.02V 12.1V DO204AL
More Detail: N/A
DataSheet: MAP4KE8.2A datasheetMAP4KE8.2A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 12.1V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 33A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

MAP4KE8.2A devices are transient voltage suppressor (TVS) diodes, which are typically used to protect sensitive electronic components from destructive electrical transients generated outside of the protected device. These devices are usually installed in parallel with a wireline, and provide some degree of protection against transient over-voltages when large surges of current occur. The protection offered depends on the surge rating of the device, the frequency of the transient and the impedance of the wireline.

Applications

MAP4KE8.2A devices are typically used in applications such as automotiveelectronic circuits, mobile phone chargers, network communication, military electronics and aerospace electronics. They can also be used in RF applications, such as impedance matching to reduce voltage standing wave ratio (VSWR) along a transmission line, or helically wound inductors for harmonic suppression. In all these applications, the device eliminates or significantly reduces the effects of transient over-voltages.

Working Principle

MAP4KE8.2A devices work on the principle of absorption of transient energy. During a transient, the parasitic capacitance between the anode and the cathode of the device conducts a charge, which is dissipated through the on-chip resistive element. This charge reduces the peak magnitude of the transient and lowers the voltage across the device. The device has an exact breakover point, beyond which the device breaks down and conducts current, thus protecting the circuit.

Package

MAP4KE8.2A devices are available in a variety of packages, including Surface Mount (SMD), through-hole, and 0.4-inch mini-MELF. The 0.4-inch mini-MELF devices are the smallest option, and are ideal for applications where space is restricted. The other packages are suitable for applications where the device is exposed.

Summary

MAP4KE8.2A devices are TVS diodes, typically used to protect sensitive electronic components from transient over-voltages by conducting a charge through an on-chip resistive element. These devices can be used in a variety of applications, such as automotive electronics, RF applications, and network communication. They are available in packages such as Surface Mount (SMD), through-hole, and 0.4-inch mini-MELF.

The specific data is subject to PDF, and the above content is for reference

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