MAZ82400ML Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	24V
Tolerance:	±6%
Power - Max:	150mW
Impedance (Max) (Zzt):	100 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 19V
Voltage - Forward (Vf) (Max) @ If:	1V @ 10mA
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	SC-90, SOD-323F
Supplier Device Package:	SMini2-F1
Base Part Number:	MAZ824

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Introduction to MAZ82400MLThe MAZ82400ML is a series of high power, single-die diode, zener-based transistors designed for power management applications. This device has a wide variety of features including low on-state resistance and large on-current capacity to reduce power consumption, very low power loss and excellent thermal conductivity. It also features a high sensitivity of reverse breakdown voltage, excellent noise protection and wide voltage range.MAZ82400ML Application FieldThe MAZ82400ML is ideal for use in many power management applications including power supply regulation, power conversion and motor control. The device has high current carrying capacity making it suitable for high current activities such as switching and related operations. It is also used for protecting against over-currents, over-voltages, over-temperature and electrostatic discharge.Many industries rely on MAZ82400ML\'s efficient and reliable performance in a variety of power management applications. It is often used in telecom, home appliances, automotive, industrial and consumer electronics applications. The device is also used in computers, printers and fax machines.MAZ82400ML Working PrincipleThe MAZ82400ML is a single-die diode, zener-based transistor. It works similarly to a traditional bipolar junction transistor (BJT) with the addition of a diode for reverse-bias operation. When a reverse bias voltage is applied, the diode allows for a low voltage drop, thus allowing for more efficient operation and improved power management.In order to understand the functioning of MAZ82400ML, one must consider the device’s two distinct modes of operation. The first mode of operation is the forward bias mode which entails the flow of current through the device. In this mode, the device acts like a normal BJT allowing electric current to pass through the base, emitter and collector terminals. The second mode is the reverse bias operation mode where the device acts as a zener diode allowing electric current to flow in the reverse direction. When operated in the reverse bias mode, the MAZ82400ML manages power by reducing the voltage drop between the emitter and the collector terminals, allowing for more efficient power management. The device also features a high sensitivity of reverse breakdown voltage, which enables it to protect against over-currents and over-voltages.ConclusionThe MAZ82400ML is a single-die diode, zener-based transistor specifically designed for power management applications. It offers a variety of features including low resistance, high current carrying capacity and excellent thermal conductivity. It also offers a degree of protection from over-currents, over-voltages, over-temperature and electrostatic discharge. This device is used in many industries and is highly acclaimed for its efficient and reliable performance.

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