MB85RC128APNF-G-JNERE1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MB85RC128APNF-G-JNERE1 Memory: Application Field and Working Principle

MB85RC128APNF-G-JNERE1 is a low-voltage non-volatile 128-kbit Ferroelectric Random Access Memory (FRAM) device manufactured by Fujitsu Semiconductor Ltd. It is designed to store input and output data in memory and facilitate rewritable non-volatile operation. This memory device is suitable for use in computers, consumer electronics, automotive, industrial, and other applications in which non-volatile random access memory and the data protection of ferroelectric memories are required.

Application Field

MB85RC128APNF-G-JNERE1 memory is used in systems that require fast data access, such as industrial systems, vehicular systems, data collection systems, and digital cameras. This device is also suitable for devices that require extracting and storing data repeatedly, such as security systems and printers.MB85RC128APNF-G-JNERE1 memory offers good retention characteristics for data protection and a long-term read-write cycle, making it ideal for long-term data storage. External I/O (Input/Output) ports enable easy connection to control boards, CPUs, and microcontrollers. This device is also suitable for applications operating in a harsh environment, since it is designed to be robust and resilient to shock, vibration, and extreme temperatures.

Working Principle

MB85RC128APNF-G-JNERE1 is one of the latest developments in Ferroelectric Random Access Memory (FRAM) technology. This device uses ferroelectric thin-film switching elements on a silicon wafer to store and access data. The device\'s internal memory is divided into 12 x 1024-byte blocks, each of which can be used as needed, allowing for flexible data storage.Ferroelectric Random Access Memory (FRAM) is a type of non-volatile memory that has excellent static storage characteristics, allowing for quick and reliable read-write access. Data can be stored in FRAM for up to 10 years. FRAM achieves fast data access and data retention through the use of ferroelectric material placed between two electrodes. When an electric field is applied to the ferroelectric material, electrons will move to either the positive or negative electrode, depending on the direction of the field. This process is known as the switching process, and it is what enables data to be written and stored in the memory.

Advantages of MB85RC128APNF-G-JNERE1 Memory

MB85RC128APNF-G-JNERE1 memory is ideal for applications that need to save data for long periods of time or to access data quickly and reliably. This type of memory offers the following advantages over other types of non-volatile memory:

• It has a high data retention rate, allowing for longer data storage times.
• Data can be read and write quickly and reliably.
• It has low power consumption, making it ideal for mobile and battery-powered applications.
• It is designed to be highly reliable and resilient to shock, vibration, and extreme temperatures.
• It is easy to connect to control boards, CPUs, and microcontrollers.

MB85RC128APNF-G-JNERE1 memory is a cost-effective solution that provides reliable and fast data storage, making it ideal for a wide range of applications. It is suitable for use in computers, consumer electronics, automotive, industrial, and other uses in which non-volatile random access memory and the data protection of ferroelectric memories are needed.

The specific data is subject to PDF, and the above content is for reference