MB85RC64PNF-G-JNE1

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MB85RC64PNF-G-JNE1 is a low-power and high-performance ferroelectric random access memory (FRAM), which is a type of non-volatile memory. FRAM combines the advantages of both Dynamic Random Access Memory (DRAM) and Flash memory, including fast read/write performance and low power consumption, and eliminates the drawbacks such when write endurance and data corruption in power down of Flash memory. This is why the MB85RC64PNF-G-JNE1 has become increasingly popular in embedded system applications.

The MB85RC64PNF-G-JNE1 is packaged in a small 8-pin SOP package with a total size of 6.1 × 3.7 × 0.9 mm, which makes it suitable for a wide range of applications. The MB85RC64PNF-G-JNE1 provides 64 kilobits of storage memory and an industry-standard I2C bus interface. It is an ideal solution for small system designs that require tight package size and low cost.

The MB85RC64PNF-G-JNE1 has a variety of applications including medical and fitness device designs, consumer electronics, smart grid systems, asset tracking systems and automotive applications. The FRAM technology of this memory allows it to deliver superior data retention, durability and high-speed access, providing a reliable and efficient performance in such systems. The low power consumption of FRAM also make MB85RC64PNF-G-JNE1 a good choice in power-sensitive applications.

In terms of how MB85RC64PNF-G-JNE1 works, it uses electricity to write data onto the memory cells. This is done through the FUJITSU ferroelectric process, which uses an electric field to manipulate the ferroelectric polarization of the ferroelectric layer. This layer contains two stable polarization directions, one representing “1” and one representing “0”. This process enables the MB85RC64PNF-G-JNE1 to write data bits directly into memory without the need for erase or reset operation.

The MB85RC64PNF-G-JNE1 provides high speed parallel data transfers of over 64 kilobits/second and write cycles at over 1 million per second. With a write endurance of 10 billion times, this memory provides reliable performance level that can handle a large number of operations. The fast write cycles and high reliability of the MB85RC64PNF-G-JNE1 makes it suitable for applications where data integrity is critical, such as consumer and industrial systems where real-time parameters need to be tracked and recorded. The extensive operating temperature range of the memory (–40°C to +85°C) adds to its suitability for use in harsh environment.

The MB85RC64PNF-G-JNE1 is an ideal choice for designs that require a low-power, high-performance non-volatile memory with a small package size. The high speed write cycles, robust data retention and comprehensive temperature range of the memory makes it suitable for a wide range of applications in consumer, automotive and industrial systems.

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