MB85RS2MTPF-G-JNERE2 Allicdata Electronics
Allicdata Part #:

865-1250-2-ND

Manufacturer Part#:

MB85RS2MTPF-G-JNERE2

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Fujitsu Electronics America, Inc.
Short Description: IC FRAM 2M SPI 25MHZ 8SOP
More Detail: FRAM (Ferroelectric RAM) Memory IC 2Mb (256K x 8) ...
DataSheet: MB85RS2MTPF-G-JNERE2 datasheetMB85RS2MTPF-G-JNERE2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mb (256K x 8)
Clock Frequency: 25MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Description

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MB85RS2MTPF-G-JNERE2 Memory Application Field and Working Principle

MB85RS2MTPF-G-JNERE2 is an FRAM memory product from Fujitsu Semiconductor. It is a rugged, highly reliable, non-volatile memory component designed for high temperature applications.

Application Field

FRAM is a type of non-volatile memory that combines the low power consumption of EEPROM and the high speed operation of RAM. FRAM has many advantages, making it suitable for applications in a wide range of industries and markets. For example, it can be used in automotive, medical and industrial applications due to its high reliability, low power consumption and wide operating temperature range.

MB85RS2MTPF-G-JNERE2 memory is an FRAM component and it is specifically designed to operate in environments with high temperatures. This component can withstand temperatures as high as 200°C without any damage to the device or its data. This makes it suitable for use in automotive, medical, and industrial applications where temperatures can be extremely high.

Working Principle

The FRAM memory product from Fujitsu Semiconductor is built with a ferroelectric process. This process involves applying a high voltage to the memory cell to create a charge inside it. This charge, when present, alters the memory cell between two states, which can be read or written to. This is the basic principle of how the memory works.

The MB85RS2MTPF-G-JNERE2 memory is designed to be more reliable than other types of memory by utilizing a ferroelectric process rather than oxide layer switching as in EEPROMs. Furthermore, the memory can be written to and read from much faster than EEPROMs. The combination of high reliability and fast speed makes the MB85RS2MTPF-G-JNERE2 memory suitable for high-performance applications.

As the FRAM memory technology is more reliable and faster than other types of non-volatile memories, it is often used in applications where extreme temperatures occur. The high temperature range of the MB85RS2MTPF-G-JNERE2 memory makes it even more suitable for these applications. Additionally, this component also has lower operating current and power consumption, which adds to its advantages.

Conclusion

The MB85RS2MTPF-G-JNERE2 memory is an FRAM component from Fujitsu Semiconductor that is specifically designed for high temperature applications. Its ferroelectric process makes it more reliable than other non-volatile memories and its fast speed and low power consumption make it suitable for high-performance applications. This makes the MB85RS2MTPF-G-JNERE2 memory a great solution for extreme temperature applications.

The specific data is subject to PDF, and the above content is for reference

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