MB85R4M2TFN-G-ASE1

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MB85R4M2TFN-G-ASE1 Memory APPLICATION FIELD AND WORKING PRINCIPLE

Memories are essential elements in today’s technologically advanced world. They are used to store information for a variety of purposes and applications. The MB85R4M2TFN-G-ASE1 memory is a high speed non-volatile memory from Fujitsu Semiconductor. It is a serial non-volatile Ferroelectric Random Access Memory (FRAM) and is primarily used in embedded system applications.

The MB85R4M2TFN-G-ASE1 memory is built with advanced FRAM technology, which enables faster memory access than traditional Flash memory. The device is available in a variety of memory sizes and can store up to 64 MB of data. It has a fast write speed of up to 9.75 MB/s, with a page write time of only 5.6 ms. Besides, the device also features error correction and enhanced read access times.

Application Field

The MB85R4M2TFN-G-ASE1 memory is a highly reliable non volatile embedded memory, which is suitable for a wide range of applications. It can be used for data logging, medical devices, industrial automation, automotive, transportation, home automation and mobile equipment etc. It offers a high level of reliability, low power consumption and low cost.

The device is also suitable for space-constrained applications such as thin and small products, as it is available in a small form factor package that is just 3.1 mm × 5.1 mm. It is designed to operate in the temperature range of -50°C to +125°C, which makes it well suited for industrial applications.

Working Principle

The MB85R4M2TFN-G-ASE1 is a serial non-volatile FRAM memory which uses patented ferroelectric technology to store information. Ferroelectric materials have a different arrangement of polarized domains compared to normal non-ferroelectric materials. This enables a memory cell to retain information even when there is no power input.

The device has integrated error correction circuit, which ensures data accuracy and reliability. The device also includes a protection circuit, which prevents data such as internal security keys from being overwritten. Furthermore, the device also features periodic refreshing to retain stored information and guarantee a long life.

The read and write times of the FRAM are short. This allows the device to perform operations rapidly, which is essential in embedded system applications. In addition, the device also features fast data transfer speeds, low power consumption and a low write-wear rate, making it more reliable and energy efficient than traditional Flash memories.

Conclusion

The MB85R4M2TFN-G-ASE1 is a high-performance embedded non-volatile memory solution from Fujitsu Semiconductor. It is suitable for a wide range of applications, including space-constrained devices, medical devices, automotive and industrial applications. Thanks to its ferroelectric technology, the FRAM offers high speed access times, fast write speeds, low power consumption, data accuracy and long life.

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