MB85RC16VPNF-G-JNN1ERE1

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MB85RC16VPNF-G-JNN1ERE1 is a kind of memory, specifically a Ferroelectric Random Access Memory (FRAM). FRAM is a type of non-volatile RAM designed to provide higher write speed, making it suitable for embedded systems and applications that require frequent changes or updates. FRAM is faster than other non-volatile memory technologies, offering far more reliability and high endurance compared to flash memory.

FRAM technology was created to bridge the gap between low-cost flash memory and high-performance SRAM. It has the same non-volatility properties as flash memory, yet its higher write speed makes it very suitable for frequent data updates in embedded systems, such as real-time operating systems (RTOS). FRAM also sports lower power consumption than flash memory and an extremely high endurance cycle compared to both SRAM and flash memories.

The MB85RC16VPNF-G-JNN1ERE1 is a 16M bit FRAM memory, with a supply voltage range from 1.7V to 3.6V and a temperature range from -40°C to +85°C. It has a low write voltage of 1.5V and offers low power consumption typically 100 times lower than conventional EEPROMs - only 41uA for the read cycle at normal speed. It also reads very fast and 2M readings/s can be carried out without additional power consumption.

The FRAM technology used by the MB85RC16VPNF-G-JNN1ERE1 is ferroelectric RAM memory, offering greater reliability and stability compared to other types of non-volatile memory. FRAM also allows faster data transfers and more frequent writing, even compared to other forms of non-volatile memory. The ferromagnetic properties of the FRAM memory also makes it more secure than other types of non-volatile memory, as well as creating higher data retention rates and faster writing rates.

The MB85RC16VPNF-G-JNN1ERE1 can be used in a variety of embedded systems applications, such as microcontrollers, small form factor microcontrollers, surveillance systems, data logging and medical applications. It can also be used for industrial applications as well as consumer applications, such as digital cameras, music players and gaming consoles. The MB85RC16VPNF-G-JNN1ERE1 is an ideal choice for any application that requires higher write performance or extreme reliability and data retention.

In summary, the MB85RC16VPNF-G-JNN1ERE1 is a ferroelectric RAM memory, which offers faster write performance, high reliability and excellent data retention, making it an ideal choice for embedded systems, industrial and consumer applications. Its low voltage operation and low power consumption make it perfect for mobile and battery-powered applications. And its extremely high endurance cycle makes it suitable for applications that require frequent writing, such as RTOS.

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