MB85RS128BPNF-G-JNERE1 Allicdata Electronics
Allicdata Part #:

865-1252-2-ND

Manufacturer Part#:

MB85RS128BPNF-G-JNERE1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Fujitsu Electronics America, Inc.
Short Description: IC FRAM 128K SPI 33MHZ 8SOP
More Detail: FRAM (Ferroelectric RAM) Memory IC 128Kb (16K x 8)...
DataSheet: MB85RS128BPNF-G-JNERE1 datasheetMB85RS128BPNF-G-JNERE1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 128Kb (16K x 8)
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The MB85RS128BPNF-G-JNERE1 is a type of memory that is widely used for a variety of applications. It is used in video game consoles, industrial robotics, medical imaging, embedded systems, and many other applications. The MB85RS128BPNF-G-JNERE1 offers a wide range of features, including a low-latency access time, high-speed data read and write speeds, and a long operating temperature range. It is also energy-efficient, reliable, and robust.

The MB85RS128BPNF-G-JNERE1 memory is composed of a high-density array of non-volatile ferroelectric RAM (FRAM) cells. Each memory cell consists of a ferroelectric material that stores an electrical charge and can be switched between two different conditions. It is nonvolatile, meaning it does not require power to maintain data, and is immune to write cycles, meaning that it can be written to an unlimited number of times. This makes it ideal for applications where reliability and data integrity are crucial.

The MB85RS128BPNF-G-JNERE1 memory is designed to enable large amounts of data to be stored and retrieved quickly, making it ideal for applications that require high data throughput. It offers a wide range of features, including low-latency access time and high-speed data read and write speeds. It also offers a long operating temperature range and is energy-efficient, reliable, and robust. Furthermore, it offers a wide range of application-specific memory blocks and utilities, making it a versatile memory solution.

In terms of its working principle, the MB85RS128BPNF-G-JNERE1 memory consists of a high-density array of ferroelectric RAM (FRAM) cells. These cells are arranged in a grid and are connected in a way that enables them to store and retrieve data quickly. To write data to the memory, a voltage is applied to the cells, which causes the charge stored in them to change. To read data from the memory, a voltage is applied to the cells and the stored charge is detected and converted into the data.

Overall, the MB85RS128BPNF-G-JNERE1 is a reliable and versatile memory solution that can be used in a wide range of applications, such as video game consoles, industrial robotics, medical imaging, embedded systems, and many others. It offers a wide range of features, including low-latency access time, high-speed data read and write speeds, and a long operating temperature range. Furthermore, it is energy-efficient, reliable, and robust and offers a wide range of application-specific memory blocks and utilities.

The specific data is subject to PDF, and the above content is for reference

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