MB85RS1MTPW-G-APEWE1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MB85RS1MTPW-G-APEWE1 is a type of memory, specifically an FRAM or ferroelectric random-access memory chip. It is a nonvolatile storage chip which means it does not require a power source to maintain data storage and is useful for applications which require large amounts of memory in a small and energy efficient form factor. FRAM is more than 1,000 times faster at writing data and requires lower power consumption than flash memory or EEPROM, and so is often used in applications where data needs to be stored for long periods of time but quickly and efficiently accessed.

The MB85RS1MTPW-G-APEWE1 is a FRAM memory device which can store up to 128K byte of nonvolatile memory. It is designed to be used in embedded applications and is available in a 16-pin SOIC package. It has a 0.18um process technology and a read speed of up to 2MHz. It also has low power consumption and low voltage operation making it suitable for battery operated applications. The device is capable of write and erase performance at 2V, with erased data retention of up to 20 years.

The MB85RS1MTPW-G-APEWE1 is most commonly used in applications which require large memories in small, energy-efficient forms such as home appliances and medical devices. The device has a variety of features which make it suitable for a range of applications. It supports both SPI and I2C communication protocols and is available in three different package sizes, offering a choice of memory capacity for a range of applications. It also has low current consumption making it suitable for low power applications. The device also comes with ECC functionality built in, allowing for data integrity to be maintained in the event of power failure.

The working principle of the MB85RS1MTPW-G-APEWE1 is based on a ferroelectric capacitor, which is coupled to a transistor. Applying an electric field to the capacitor creates a dipole which then stores data. This information can then be read and written to and is retained even when no power is present. The device also has an integrated controller which enables write and erase operations. This controller can also be used to perform error checking and correct any data inconsistencies which may occur.

In summary, the MB85RS1MTPW-G-APEWE1 is a type of FRAM memory suitable for applications which require large amounts of memory in a small and energy efficient form factor. It is capable of write and erase performance at 2V and has ECC built in for ensuring data integrity. It is most commonly used in applications such as home appliances and medical devices which require large memories. Its working principle is based on a ferroelectric capacitor coupled to a transistor, which stores data when an electric field is applied, and can be read, written and erased using the integrated controller.

The specific data is subject to PDF, and the above content is for reference