MB85R256FPFCN-G-BNDE1

Essentials of MB85R256FPFCN-G-BNDE1

The MB85R256FPFCN-G-BNDE1 is a Serial FRAM (Ferroelectric Random Access Memory), part of a line-up of memory products from Fujitsu Semiconductor that have low power consumption and offer excellent noise immunity. It belongs to the family of FRAM products that enable a wide range of applications.

Classifying Memory:

Memory is a kind of data storage device used for storing programs and data for later use. It is divided into two categories - primary memory and secondary memory. Primary memory is also known as volatile memory and is the working memory used during data processing. Secondary memory, also known as non-volatile memory, is the data storage device used for archiving or permanent storage of data.

MB85R256FPFCN-G-BNDE1 Application Field:

The MB85R256FPFCN-G-BNDE1 is capable of providing long-term data retention, with speeds up to 60MHz and is well suited for a variety of applications such as personal healthcare, consumer electronics, automotive, industrial instruments and measurement, factory automation, security and networking systems.The MB85R256FPFCN-G-BNDE1’s low power consumption of just 20µA (operating) makes it ideal for battery powered equipment and systems. Other features, such as vibration resistance and extended temperature range performance, further add to its ability to cater for new and emerging requirements and applications.

Working Principle of MB85R256FPFCN-G-BNDE1:

The MB85R256FPFCN-G-BNDE1 utilizes Fujitsu’s ferroelectric Random Access Memory (FRAM). This type of memory is a non-volatile memory that combines the low power consumption of EEPROM and the fast read/write access times of RAM.The FRAM is based on an FeRAM cell comprised of an integrated capacitor and a switch. The data is stored in the capacitor and the state of the switch controls if the cell is storing a zero or a 1. This information can be read or written in a single access cycle, providing an extremely fast access time.The MB85R256FPFCN-G-BNDE1 works by taking advantage of the FRAM’s unique properties. By utilizing a low current writing circuit, the MB85R256FPFCN-G-BNDE1 is capable of writing a bit in just 12.5nS. This writing circuit also ensures that the power consumption is kept to a minimum during the write operation.The MB85R256FPFCN-G-BNDE1 also uses a Serial Peripheral Interface (SPI) bus. This bus is a simple serial protocol that is used to communicate with the FRAM in order to read and write data. The SPI bus can operate at up to 60MHz, meaning that data can be read from and written to the FRAM at speeds of up to 60MHz.

Conclusion:

The MB85R256FPFCN-G-BNDE1 is an excellent choice for applications requiring low power consumption, fast read/write access times, and vibration resistance. Its ability to operate at lower power consumption, in extended temperature ranges, and with speeds of up to 60MHz make it well suited for a wide range of applications. Its use of the SPI bus protocol makes it a great choice for embedded systems where a simple serial protocol is required.