MBR5H100MFST3G Discrete Semiconductor Products |
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Allicdata Part #: | MBR5H100MFST3GOSTR-ND |
Manufacturer Part#: |
MBR5H100MFST3G |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 100V 5A 5DFN |
More Detail: | Diode Schottky 100V 5A Surface Mount 5-DFN (5x6) (... |
DataSheet: | MBR5H100MFST3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.17236 |
10000 +: | $ 0.17023 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 730mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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A common rectifier diode used in power rectification and controlling purposes is the MBR5H100MFST3G. It is a single rectifier with low forward voltage drop, family brand Infineon Technologies and with a maximum repetitive reverse voltage of 100V. It has a maximum average forward current of 5A and a peak surge capacity of 25A. The MBR5H100MFST3G offers excellent surge handling capability, higher temperatures, and higher thermal coefficients.
The MBR5H100MFST3G is a general-purpose, voltage-type rectifier diodes available in three configurations. It is offered in a surface mount package and is available in axial leaded encapsulation as well. The three configurations are single, fast recovery, and ultrafast. The single type has a high forward voltage drop and a fast reverse recovery time. The fast recovery type has a low forward voltage drop and a slow reverse recovery time. The ultrafast type has a low forward voltage drop and a very fast reverse recovery time.
The primary application of the MBR5H100MFST3G is in power rectification. It is used primarily in switched-mode power supplies (SMPS) and other areas where efficient power conversion is required. It can also be used as an alternative to thyristors as a main switch in low-voltage applications, such as high-fidelity audio amplifiers. The diode can also be used as an overvoltage protection device in circuits where a high surge of current may occur.
The working principle of the MBR5H100MFST3G is based on the behavior of a PN junction. When a current is applied to a PN junction, a depletion region is formed on both sides of the junction. This depletion region blocks the flow of current in one direction while allowing it to flow in the other direction. This effect is called rectification, since the current is being rectified or changed from AC to pulsating DC. The MBR5H100MFST3G has a forward voltage drop of around 0.7V, allowing it to behave similarly to other popular rectifier diodes in such circuits.
In summary, the MBR5H100MFST3G is a single rectifier with low forward voltage drop, family brand Infineon Technologies and with a maximum repetitive reverse voltage of 100V. Its main application is in power rectification circuits, including SMPS and over voltage protection. The diode works using the principle of a PN junction with a forward voltage drop of around 0.7V. It is also available in fast recovery and ultrafast configurations.
The specific data is subject to PDF, and the above content is for reference
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