MBR6060R

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):	60V
Current - Average Rectified (Io):	60A
Voltage - Forward (Vf) (Max) @ If:	750mV @ 60A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	5mA @ 20V
Capacitance @ Vr, F:	--
Mounting Type:	Chassis, Stud Mount
Package / Case:	DO-203AB, DO-5, Stud
Supplier Device Package:	DO-5
Operating Temperature - Junction:	-65°C ~ 150°C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the MBR6060R

The MBR6060R is a metal-oxide-semiconductor field-effect transistor (MOSFET) or field effect transistor (FET) diode with single rectifier. It is a three-terminal device that employs a metal-oxide gate for controlling the flow of current when connected to an appropriate circuit. The MBR6060R is used in a variety of applications, including radio frequency (RF) circuits and high voltage converters. This article takes a closer look at the MBR6060R and its application field and working principle.

Application Field of the MBR6060R

The MBR6060R is used in a number of applications. First, it can be used in high voltage DC-DC converters and AC-DC converters. In these configurations, the MBR6060R serves as a rectifier, controlling the current flow as it is connected in series with the input AC or DC voltages. In addition, the MBR6060R can be used in RF circuits such as antennas, amplifiers, oscillators, and filters. It can also be used in automotive, energy storage, and Lightning/overvoltage protection circuits.

Working Principle of the MBR6060R

The MBR6060R works according to the MOSFET or FET principle of operation. This device is made up of two layers of silicon, one of which is the gate and the other is the body. The gate is a metal-oxide layer that is used to control the current flow in the semiconductor by responding to voltage fluctuations. When a voltage is applied to the gate, it attracts a charge of electrons from the body which creates an inversion layer between the gate and the body. This inversion layer, also known as a “channel”, is used to control the flow of current. When the voltage applied to the gate is high, the channel is wide and allows for a large current flow. When the voltage applied to the gate is low, the channel is narrow and the current flow is reduced.

Conclusion

The MBR6060R is a single rectifier diode with a FET or MOSFET principle of operation. It is used in a number of applications, including high voltage converters, RF circuits, automotive, energy storage, and Lightning/overvoltage protection circuits. The gate of the MBR6060R is a metal-oxide layer that is used to control the flow of current by responding to voltage fluctuations. By controlling the current flow, the MBR6060R can be used to regulate power and provide protection for sensitive circuitry in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description