MBR7H35-E3/45 Allicdata Electronics
Allicdata Part #:

MBR7H35-E3/45-ND

Manufacturer Part#:

MBR7H35-E3/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 35V 7.5A TO220AC
More Detail: Diode Schottky 35V 7.5A Through Hole TO-220AC
DataSheet: MBR7H35-E3/45 datasheetMBR7H35-E3/45 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 35V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Diodes - Rectifiers - Single

The MBR7H35-E3/45 is a single phase discrete Schottky rectifier, a type of diode, that provides high temperature and high efficiency performance for a range of rectifier applications. It is specifically designed for applications with high efficiency and low thermal resistance requirements, such as in AC/DC and DC/DC converters.

The device has a maximum breakdown voltage of 45 V and a continuous forward current rating of 7 A. It is housed in a TO-263AB (D 2 PAK) package and can withstand an operating temperature range from -55°C to +175°C. The device is also RoHS compliant and is suitable for both commercial and industrial applications.

Working Principle

Schottky diodes utilize a low forward voltage drop of around 0.3 volts, making them efficient rectifier devices. A Schottky diode operates in a similar fashion to a conventional diode, but instead of the semiconductor-metal junction, a metal-semiconductor junction is utilized. This reduces the width of the junction, as well as the associated forward voltage drop.

The MBR7H35-E3/45 utilizes a metal-semiconductor junction which acts as a rectification component. When the device is forward biased, electrons from the n-type silicon are injected into the metal barrier (metal-semiconductor junction), creating a conduction path for current flow. This allows for a rectification effect, allowing current to pass through the device in a single direction.

When the device is reverse biased, the electric field created by the voltage causes the depletion layer at the metal-semiconductor junction to become larger, creating a much larger barrier for current flow. This prevents the current from flowing in the reverse direction, effectively blocking the flow of current.

Applications

The MBR7H35-E3/45 is a highly efficient rectifier device and is suitable for a wide range of applications. These include:

  • DC/DC converters
  • DC/AC inverters
  • Power line conditions
  • Switch modulators
  • Switching power supplies
  • Charging circuits
  • High-frequency rectifiers
  • High current applications

In addition to these applications, the MBR7H35-E3/45 has a wide range of features that make it attractive to many other industries, including motor drives, audio and broadcast equipment and automotive applications. The device’s high temperature performance and RoHS compliance make it a reliable and efficient device for many types of rectification applications.

The specific data is subject to PDF, and the above content is for reference

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