| Allicdata Part #: | MBRF1050HC0G-ND |
| Manufacturer Part#: |
MBRF1050HC0G |
| Price: | $ 0.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE SCHOTTKY 50V 10A ITO220AC |
| More Detail: | Diode Schottky 50V 10A Through Hole ITO-220AC |
| DataSheet: |  MBRF1050HC0G Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.19843 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 800mV @ 10A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 100µA @ 50V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 Full Pack |
| Supplier Device Package: | ITO-220AC |
| Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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The MBRF1050HC0G is a high current, high speed, low forward voltage Schottky barrier rectifier diode. It is usually used in DC to DC converters, power converters, power conditioning, and power supply applications. This diode has a very low forward voltage drop of 0.4 volts and a very high current rating of 10A with a maximum power dissipation of 1.25W. It has a low junction capacitance of 22pF, allowing it to provide high speed switching and reduce EMI problems.The MBRF1050HC0G is a single-phase, full-wave, low forward voltage diode. It is manufactured in a surface mount package and has a low forward voltage drop of 0.4V. This diode has a maximum reverse voltage rating of 50V and a maximum continuous forward current rating of 10A. The forward voltage drop is kept very low by using a special Schottky barrier technology. In the area of application of this diode, its low forward voltage drop and high current rating make it suitable for use in general purpose switching and power converters, DC-DC converters and other applications. Its low forward voltage drop also makes it a good choice for high efficiency switching power supplies. It also has a low capacitance of 22 pF, which makes it suitable for use in high frequency switching applications. The typical working principle of MBRF1050HC0G Schottky diode consists of two rectifying junctions operating in reverse biased mode. In forward bias, when the anode is positively biased with respect to the cathode, electrons travel through the device and form an electric current. When the applied voltage on the anode is more than the Schottky barrier potential, majority carriers (electrons) start to pass through the diode junction. In reverse bias, majority carriers recombine in the depletion region and very small minority carrier current passes through the diode. MBRF1050HC0G is used in many applications such as power supply and power conversion, DC-DC converters, power conditioning, motor controls, lighting control and much more. This diode also offers very low power dissipation and low forward voltage drop. This makes it a suitable choice for low power applications such as motor controls and lighting controls.In conclusion, the MBRF1050HC0G is a high current, high speed, low forward voltage Schottky barrier rectifier diode. It is suitable for use in power converters, DC-DC converters and other applications that require a low forward voltage drop and high current rating. It is also a good choice for power supply applications due to its low capacitance and high speed switching capabilities.
The specific data is subject to PDF, and the above content is for reference
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