MBRF1060HE3/45

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MBRF1060HE3/45 is a device used in various applications and is generally categorised into the diode - rectifier - single category. This article provides an overview of the device and its electrical properties, as well as its application field and working principle.

MBRF1060HE3/45 is a planar diffused epitaxial construction silicon rectifier diode built for use with surface mount technology. It is designed for use in light intermittent load applications, in which low voltage and high surge current capability are required. The design of the diode is such that it has a reverse recovery charge of 22uC, a series inductance of 0.60nanoseconds and a low forward voltage drop of 0.60 Volts.

Some of the applications for this device include aerospace, automotive, power systems, energy storage, communications and consumer electronics. The device also finds use in DC-DC converters, solar panel applications and other related circuits.

The working principle of the MBRF1060HE3/45 involves the movement of electrical current when it is connected to a power source. At such times, the negative charge accumulates at the P-semiconductor layer and the positive charge at the N-semiconductor layer. When the negative charge accumulates at the P-semiconductor layer, it begins to repel the positive charge at the N-semiconductor layer, resulting in an electric field.

As the electric field dissipates, this flow of current starts to taper off and then eventually stops. This phenomenon is known as Carrier Recombination and is what makes the diode an ideal choice for applications such as light load, intermittent currents.

The MBRF1060HE3/45 is an excellent choice for applications needing high surge current, low forward voltage drop, and fast switching speed. Its fast switching time and low series inductance make it ideal for high frequency and high voltage switching applications. The device is also suitable for use in automotive, aerospace, power systems, energy storage, communications and consumer electronics.

In conclusion, the MBRF1060HE3/45 is a device used in a wide range of applications, including aerospace, automotive, power systems, energy storage, communications and consumer electronics. It is an excellent choice for applications needing high surge current and fast switching speed. The device works by allowing negative charge to accumulate at the P-semiconductor layer and positive charge to accumulate at the N-semiconductor layer, resulting in an electric field. This field ultimately dissipates, resulting in Carrier Recombination, which allows for the current to slow and eventually stop.

The specific data is subject to PDF, and the above content is for reference