MBRF735HC0G

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The MBRF735HC0G is a single, standard recovery rectifier built from high conductivity crystal silicon material. It is rated to handle currents up to 735 A at peak reverse voltage 1000V. The rectifying element of this device is a Schottky barrier diode, also referred to as a Hot Carrier diode. The diode\'s structure is designed to minimize forward voltage drop, thus allowing it to deliver a high current with very low power loss. This makes the MBRF735HC0G a popular choice for high-frequency switching, like in DC-DC converters, motor drives, and solar power controller applications.

The MBRF735HC0G offers a wide junction temperature range of -55˚C to +175˚C, with positive temperature coefficient mA range of 2.5-5.5 mA. The diode is robust with a high surge current rating of 6500A IRMS. It also offers fast switching for use in high-frequency applications, with a reverse recovery time rating of less than 150 ns. In addition, the MBRF735HC0G is also RoHS-compliant.

The working principle of the MBRF735HC0G is based on the P-N junction of the Schottky diode. The P-N junction serves as a rectifier, allowing current to flow only in one direction while blocking current flow in the other direction. When a positive voltage is applied, electrons from the n-type layer are attracted to the p-type layer, forming a pool of charge at the junction. This charge then creates a depletion region, preventing further current in the reverse direction and so acting as a rectifier.The specific data is subject to PDF, and the above content is for reference